Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET

Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET

The severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. In this article, a series capacitance gate driver (SCGD) is proposed to solve this problem. The series capacitance is charged or discharged in switching transient so that the equivalent driving...

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Bibliographic Details
Main Authors: Sheng Dou, Liansheng Huang, Peng Fu, Xiaojiao Chen, Xiuqing Zhang, Shiying He, Zejing Wang, Jian Yang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
voltage oscillation
safety and EMI
switching loss
Online Access:https://ieeexplore.ieee.org/document/10381516/

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