Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t&...
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MDPI AG
2021-11-01
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| Series: | Membranes |
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| Online Access: | https://www.mdpi.com/2077-0375/11/12/929 |
| _version_ | 1797502592879689728 |
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| author | Qi Li Junchen Dong Dedong Han Yi Wang |
| author_facet | Qi Li Junchen Dong Dedong Han Yi Wang |
| author_sort | Qi Li |
| collection | DOAJ |
| description | InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t<sub>ITO</sub>, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with t<sub>ITO</sub>, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a t<sub>ITO</sub> of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µ<sub>FE</sub>) of 37.69 cm<sup>2</sup>/Vs, a V<sub>on</sub> of −2.3 V, a SS of 167.49 mV/decade, and an on–off current ratio over 10<sup>7</sup>. This work paves the way for practical application of the ITO TFTs. |
| first_indexed | 2024-03-10T03:36:20Z |
| format | Article |
| id | doaj.art-8f787a1c557648188002998ce9564b56 |
| institution | Directory Open Access Journal |
| issn | 2077-0375 |
| language | English |
| last_indexed | 2024-03-10T03:36:20Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Membranes |
| spelling | doaj.art-8f787a1c557648188002998ce9564b562023-11-23T09:30:02ZengMDPI AGMembranes2077-03752021-11-01111292910.3390/membranes11120929Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film TransistorsQi Li0Junchen Dong1Dedong Han2Yi Wang3Institute of Microelectronics, Peking University, Beijing 100871, ChinaSchool of Information & Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t<sub>ITO</sub>, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with t<sub>ITO</sub>, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a t<sub>ITO</sub> of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µ<sub>FE</sub>) of 37.69 cm<sup>2</sup>/Vs, a V<sub>on</sub> of −2.3 V, a SS of 167.49 mV/decade, and an on–off current ratio over 10<sup>7</sup>. This work paves the way for practical application of the ITO TFTs.https://www.mdpi.com/2077-0375/11/12/929ITO TFTschannel thicknesselectrical characteristicsstability |
| spellingShingle | Qi Li Junchen Dong Dedong Han Yi Wang Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors Membranes ITO TFTs channel thickness electrical characteristics stability |
| title | Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors |
| title_full | Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors |
| title_fullStr | Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors |
| title_full_unstemmed | Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors |
| title_short | Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors |
| title_sort | effects of channel thickness on electrical performance and stability of high performance insno thin film transistors |
| topic | ITO TFTs channel thickness electrical characteristics stability |
| url | https://www.mdpi.com/2077-0375/11/12/929 |
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