Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t&...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
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| Series: | Membranes |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2077-0375/11/12/929 |