Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/11/1422 |
| _version_ | 1797509312444104704 |
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| author | Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim |
| author_facet | Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim |
| author_sort | Ki Yeong Kim |
| collection | DOAJ |
| description | In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%. |
| first_indexed | 2024-03-10T05:15:57Z |
| format | Article |
| id | doaj.art-8fa3ec2d80e6491bafb59e6bafbe8e68 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T05:15:57Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-8fa3ec2d80e6491bafb59e6bafbe8e682023-11-23T00:27:19ZengMDPI AGMicromachines2072-666X2021-11-011211142210.3390/mi12111422Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer LayersKi Yeong Kim0Joo Seok Noh1Tae Young Yoon2Jang Hyun Kim3School of Electrical Engineering, Pukyong National University, Busan 48513, KoreaSchool of Electrical Engineering, Pukyong National University, Busan 48513, KoreaSchool of Electrical Engineering, Pukyong National University, Busan 48513, KoreaSchool of Electrical Engineering, Pukyong National University, Busan 48513, KoreaIn this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.https://www.mdpi.com/2072-666X/12/11/1422super junctionIGBTp-pillarn-buffer layeron-state voltagebreakdown voltage |
| spellingShingle | Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers Micromachines super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage |
| title | Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
| title_full | Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
| title_fullStr | Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
| title_full_unstemmed | Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
| title_short | Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
| title_sort | improvement in turn off loss of the super junction igbt with separated n buffer layers |
| topic | super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage |
| url | https://www.mdpi.com/2072-666X/12/11/1422 |
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