Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...

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Bibliographic Details
Main Authors: Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Micromachines
Subjects:
super junction
IGBT
p-pillar
n-buffer layer
on-state voltage
breakdown voltage
Online Access:https://www.mdpi.com/2072-666X/12/11/1422

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