Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...
Main Authors: | Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-11-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/11/1422 |
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