Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron
In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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De Gruyter
2014-12-01
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| Series: | High Temperature Materials and Processes |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/htmp-2013-0123 |
| _version_ | 1818650792345731072 |
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| author | Gui Miaomiao Fang Yunhui Yu Zhaoju |
| author_facet | Gui Miaomiao Fang Yunhui Yu Zhaoju |
| author_sort | Gui Miaomiao |
| collection | DOAJ |
| description | In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of the resulting HPBCS was investigated by TGA. The ceramic yield of the HPBCS is about 84% and that of the counterpart hyperbranched hydridopolycarbosilane is only 45%, indicating that the introduction of boron into the preceramic polymer significantly improved the ceramic yield. With the polymer-derived ceramic route, the final ceramics were annealed at 1800 °C in argon atmosphere for 2 h in order to characterize the microstructure and to evaluate the high-temperature behavior. The final ceramic microstructure was studied by XRD and SEM, indicating that the introduction of boron dramatically inhibits SiC crystallization. The boron-containing SiC ceramic shows excellent high-temperature behavior against decomposition and crystallization at 1800 °C. |
| first_indexed | 2024-12-17T01:55:51Z |
| format | Article |
| id | doaj.art-8fa51f2a2a23481188663b8227b97e87 |
| institution | Directory Open Access Journal |
| issn | 0334-6455 2191-0324 |
| language | English |
| last_indexed | 2024-12-17T01:55:51Z |
| publishDate | 2014-12-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | High Temperature Materials and Processes |
| spelling | doaj.art-8fa51f2a2a23481188663b8227b97e872022-12-21T22:07:58ZengDe GruyterHigh Temperature Materials and Processes0334-64552191-03242014-12-0133656357010.1515/htmp-2013-0123Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing BoronGui Miaomiao0Fang Yunhui1Yu Zhaoju2Key Laboratory of Advanced Civil Engineering Materials, Ministry of Education, Tongji University, Shanghai 200092, ChinaXiamen Academy of Building Research, Xiamen 361004, ChinaCollege of Materials, Xiamen University, Xiamen 361005, ChinaIn this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of the resulting HPBCS was investigated by TGA. The ceramic yield of the HPBCS is about 84% and that of the counterpart hyperbranched hydridopolycarbosilane is only 45%, indicating that the introduction of boron into the preceramic polymer significantly improved the ceramic yield. With the polymer-derived ceramic route, the final ceramics were annealed at 1800 °C in argon atmosphere for 2 h in order to characterize the microstructure and to evaluate the high-temperature behavior. The final ceramic microstructure was studied by XRD and SEM, indicating that the introduction of boron dramatically inhibits SiC crystallization. The boron-containing SiC ceramic shows excellent high-temperature behavior against decomposition and crystallization at 1800 °C.https://doi.org/10.1515/htmp-2013-0123boronhyperbranched polymersicsingle-source precursor77.84.bw |
| spellingShingle | Gui Miaomiao Fang Yunhui Yu Zhaoju Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron High Temperature Materials and Processes boron hyperbranched polymer sic single-source precursor 77.84.bw |
| title | Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron |
| title_full | Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron |
| title_fullStr | Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron |
| title_full_unstemmed | Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron |
| title_short | Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron |
| title_sort | single source precursor synthesis and high temperature behavior of sic ceramics containing boron |
| topic | boron hyperbranched polymer sic single-source precursor 77.84.bw |
| url | https://doi.org/10.1515/htmp-2013-0123 |
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