Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation
Strip optical waveguides were realized in Yb3+-doped silicate glass with ultrashort pulse laser ablation assisted He+ ion implantation. Planar waveguides were first prepared near the glass surface by He+ ion implantation (450 keV + 500 keV + 550 keV), followed by annealing at 260℃. After that, under...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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De Gruyter
2022-12-01
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| Series: | Open Physics |
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| Online Access: | https://doi.org/10.1515/phys-2022-0220 |
| _version_ | 1811171440342335488 |
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| author | Bai Jing Wang Jin Li Ji Long Xue-Wen Liu Chun-Xiao Xie Peng Wang Wei-Qiang |
| author_facet | Bai Jing Wang Jin Li Ji Long Xue-Wen Liu Chun-Xiao Xie Peng Wang Wei-Qiang |
| author_sort | Bai Jing |
| collection | DOAJ |
| description | Strip optical waveguides were realized in Yb3+-doped silicate glass with ultrashort pulse laser ablation assisted He+ ion implantation. Planar waveguides were first prepared near the glass surface by He+ ion implantation (450 keV + 500 keV + 550 keV), followed by annealing at 260℃. After that, under the processing parameters of 3 μJ energy and 50 μm/s ablation velocity, two parallel tracks with separation of 15, 20, and 25 μm were, respectively, inscribed on the sample, which confine the light in lateral direction to form a strip waveguide. The near-field intensity measurement indicates that the strip waveguides maintain the single-mode propagation characteristics with 976 nm laser injection, and present the multi-mode characteristics with 632.8 nm laser injection, showing that the guided modes are well supported in the strip waveguides. The minimum propagation loss of strip waveguide is 1.35 dB/cm. Fluorescence emission spectra indicate that the gain properties of waveguide core were maintained well after waveguide preparation, revealing that the strip waveguide device in Yb3+-doped silicate glass has the potential to become an active device as waveguide laser or waveguide amplifier. |
| first_indexed | 2024-04-10T17:15:18Z |
| format | Article |
| id | doaj.art-8fb1c28745214a4894307b726e6ba108 |
| institution | Directory Open Access Journal |
| issn | 2391-5471 |
| language | English |
| last_indexed | 2024-04-10T17:15:18Z |
| publishDate | 2022-12-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Open Physics |
| spelling | doaj.art-8fb1c28745214a4894307b726e6ba1082023-02-05T18:11:57ZengDe GruyterOpen Physics2391-54712022-12-012011295130210.1515/phys-2022-0220Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablationBai Jing0Wang Jin1Li Ji2Long Xue-Wen3Liu Chun-Xiao4Xie Peng5Wang Wei-Qiang6Department of Physics, Taiyuan Normal University, Jinzhong, 030619, ChinaDepartment of Physics, Taiyuan Normal University, Jinzhong, 030619, ChinaDepartment of Physics, Taiyuan Normal University, Jinzhong, 030619, ChinaInstitute of Medical Physics, Hunan University of Medicine, Huaihua, Hunan 418000, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaDepartment of Engineer Science, University of Oxford, Parks Road, OxfordOX1 3PJ, United KingdomState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an710119, ChinaStrip optical waveguides were realized in Yb3+-doped silicate glass with ultrashort pulse laser ablation assisted He+ ion implantation. Planar waveguides were first prepared near the glass surface by He+ ion implantation (450 keV + 500 keV + 550 keV), followed by annealing at 260℃. After that, under the processing parameters of 3 μJ energy and 50 μm/s ablation velocity, two parallel tracks with separation of 15, 20, and 25 μm were, respectively, inscribed on the sample, which confine the light in lateral direction to form a strip waveguide. The near-field intensity measurement indicates that the strip waveguides maintain the single-mode propagation characteristics with 976 nm laser injection, and present the multi-mode characteristics with 632.8 nm laser injection, showing that the guided modes are well supported in the strip waveguides. The minimum propagation loss of strip waveguide is 1.35 dB/cm. Fluorescence emission spectra indicate that the gain properties of waveguide core were maintained well after waveguide preparation, revealing that the strip waveguide device in Yb3+-doped silicate glass has the potential to become an active device as waveguide laser or waveguide amplifier.https://doi.org/10.1515/phys-2022-0220strip optical waveguideyb3+-doped silicate glassion implantationfemtosecond laser ablation |
| spellingShingle | Bai Jing Wang Jin Li Ji Long Xue-Wen Liu Chun-Xiao Xie Peng Wang Wei-Qiang Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation Open Physics strip optical waveguide yb3+-doped silicate glass ion implantation femtosecond laser ablation |
| title | Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation |
| title_full | Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation |
| title_fullStr | Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation |
| title_full_unstemmed | Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation |
| title_short | Strip waveguides in Yb3+-doped silicate glass formed by combination of He+ ion implantation and precise ultrashort pulse laser ablation |
| title_sort | strip waveguides in yb3 doped silicate glass formed by combination of he ion implantation and precise ultrashort pulse laser ablation |
| topic | strip optical waveguide yb3+-doped silicate glass ion implantation femtosecond laser ablation |
| url | https://doi.org/10.1515/phys-2022-0220 |
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