The Effect of Fin Structure in 5 nm FinFET Technology
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin height lies between 50~60 nm. The threshold v...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
JommPublish
2019-12-01
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| Series: | Journal of Microelectronic Manufacturing |
| Subjects: | |
| Online Access: | http://www.jommpublish.org/p/44/# |
| _version_ | 1819062067017023488 |
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| author | Enming Shang Yu Ding Wenqiao Chen Shaojian Hu Shoumian Chen |
| author_facet | Enming Shang Yu Ding Wenqiao Chen Shaojian Hu Shoumian Chen |
| author_sort | Enming Shang |
| collection | DOAJ |
| description | In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin height lies between 50~60 nm. The threshold voltage shift by quantum confinement effect has a steep increase as fin width shrinks to 4 nm. Sharper fin cross section profile gives better subthreshold swing (SS) and stronger drive current because of better gate control. |
| first_indexed | 2024-12-21T14:52:53Z |
| format | Article |
| id | doaj.art-8fc53787488b49e9b2530761fde87837 |
| institution | Directory Open Access Journal |
| issn | 2578-3769 2578-3769 |
| language | English |
| last_indexed | 2024-12-21T14:52:53Z |
| publishDate | 2019-12-01 |
| publisher | JommPublish |
| record_format | Article |
| series | Journal of Microelectronic Manufacturing |
| spelling | doaj.art-8fc53787488b49e9b2530761fde878372022-12-21T18:59:50ZengJommPublishJournal of Microelectronic Manufacturing2578-37692578-37692019-12-012410.33079/jomm.19020405The Effect of Fin Structure in 5 nm FinFET TechnologyEnming Shang0Yu Ding1Wenqiao Chen2Shaojian Hu3Shoumian Chen4Shanghai IC R, &, D Center, Shanghai, ChinaShanghai IC R, &, D Center, Shanghai, ChinaShanghai IC R, &, D Center, Shanghai, ChinaShanghai IC R, &, D Center, Shanghai, ChinaShanghai IC R, &, D Center, Shanghai, ChinaIn 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin height lies between 50~60 nm. The threshold voltage shift by quantum confinement effect has a steep increase as fin width shrinks to 4 nm. Sharper fin cross section profile gives better subthreshold swing (SS) and stronger drive current because of better gate control.http://www.jommpublish.org/p/44/#5 nmfinfetfin profilesemiconductor |
| spellingShingle | Enming Shang Yu Ding Wenqiao Chen Shaojian Hu Shoumian Chen The Effect of Fin Structure in 5 nm FinFET Technology Journal of Microelectronic Manufacturing 5 nm finfet fin profile semiconductor |
| title | The Effect of Fin Structure in 5 nm FinFET Technology |
| title_full | The Effect of Fin Structure in 5 nm FinFET Technology |
| title_fullStr | The Effect of Fin Structure in 5 nm FinFET Technology |
| title_full_unstemmed | The Effect of Fin Structure in 5 nm FinFET Technology |
| title_short | The Effect of Fin Structure in 5 nm FinFET Technology |
| title_sort | effect of fin structure in 5 nm finfet technology |
| topic | 5 nm finfet fin profile semiconductor |
| url | http://www.jommpublish.org/p/44/# |
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