The Effect of Fin Structure in 5 nm FinFET Technology
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin height lies between 50~60 nm. The threshold v...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
JommPublish
2019-12-01
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| Series: | Journal of Microelectronic Manufacturing |
| Subjects: | |
| Online Access: | http://www.jommpublish.org/p/44/# |