Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds
Abstract Diamond‐like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high‐performance diamond‐like thermoelectric materials are p‐type semiconductors. The lack of high‐performance n‐type diamond‐like thermoelectric materials grea...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2018-03-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.201700727 |
| _version_ | 1818327210332782592 |
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| author | Pengfei Qiu Yuting Qin Qihao Zhang Ruoxi Li Jiong Yang Qingfeng Song Yunshan Tang Shengqiang Bai Xun Shi Lidong Chen |
| author_facet | Pengfei Qiu Yuting Qin Qihao Zhang Ruoxi Li Jiong Yang Qingfeng Song Yunshan Tang Shengqiang Bai Xun Shi Lidong Chen |
| author_sort | Pengfei Qiu |
| collection | DOAJ |
| description | Abstract Diamond‐like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high‐performance diamond‐like thermoelectric materials are p‐type semiconductors. The lack of high‐performance n‐type diamond‐like thermoelectric materials greatly restricts the fabrication of diamond‐like material‐based modules and their real applications. In this work, it is revealed that n‐type AgInSe2 diamond‐like compound has intrinsically high thermoelectric performance with a figure of merit (zT) of 1.1 at 900 K, comparable to the best p‐type diamond‐like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low‐frequency Ag‐Se “cluster vibrations,” as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high‐performance n‐type AgInSe2‐based compounds, the diamond‐like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond‐like thermoelectric materials. |
| first_indexed | 2024-12-13T12:12:39Z |
| format | Article |
| id | doaj.art-8fcbf0c2ad9d4855abc56147d75ae67d |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-13T12:12:39Z |
| publishDate | 2018-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-8fcbf0c2ad9d4855abc56147d75ae67d2022-12-21T23:46:48ZengWileyAdvanced Science2198-38442018-03-0153n/an/a10.1002/advs.201700727Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like CompoundsPengfei Qiu0Yuting Qin1Qihao Zhang2Ruoxi Li3Jiong Yang4Qingfeng Song5Yunshan Tang6Shengqiang Bai7Xun Shi8Lidong Chen9State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaMaterials Genome Institute Shanghai University Shanghai 200444 ChinaMaterials Genome Institute Shanghai University Shanghai 200444 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 ChinaAbstract Diamond‐like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high‐performance diamond‐like thermoelectric materials are p‐type semiconductors. The lack of high‐performance n‐type diamond‐like thermoelectric materials greatly restricts the fabrication of diamond‐like material‐based modules and their real applications. In this work, it is revealed that n‐type AgInSe2 diamond‐like compound has intrinsically high thermoelectric performance with a figure of merit (zT) of 1.1 at 900 K, comparable to the best p‐type diamond‐like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low‐frequency Ag‐Se “cluster vibrations,” as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high‐performance n‐type AgInSe2‐based compounds, the diamond‐like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond‐like thermoelectric materials.https://doi.org/10.1002/advs.201700727ab initio calculationsdiamond‐like compoundsthermoelectric materialsthermoelectric modules |
| spellingShingle | Pengfei Qiu Yuting Qin Qihao Zhang Ruoxi Li Jiong Yang Qingfeng Song Yunshan Tang Shengqiang Bai Xun Shi Lidong Chen Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds Advanced Science ab initio calculations diamond‐like compounds thermoelectric materials thermoelectric modules |
| title | Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds |
| title_full | Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds |
| title_fullStr | Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds |
| title_full_unstemmed | Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds |
| title_short | Intrinsically High Thermoelectric Performance in AgInSe2 n‐Type Diamond‐Like Compounds |
| title_sort | intrinsically high thermoelectric performance in aginse2 n type diamond like compounds |
| topic | ab initio calculations diamond‐like compounds thermoelectric materials thermoelectric modules |
| url | https://doi.org/10.1002/advs.201700727 |
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