Phase Change Ge-Rich Ge–Sb–Te/Sb<sub>2</sub>Te<sub>3</sub> Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Phase Change Ge-Rich Ge–Sb–Te/Sb<sub>2</sub>Te<sub>3</sub> Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb<sub>2</sub>Te<sub>3</sub> core-shell nan...

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Bibliographic Details
Main Authors: Arun Kumar, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, Massimo Longo
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Nanomaterials
Subjects:
MOCVD
VLS
phase-change memory
nanowires
core-shell
Ge–Sb–Te
Online Access:https://www.mdpi.com/2079-4991/11/12/3358

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