Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films
Based on chemically synthesized powders of FeGa3, CoGa3, as well as of a Fe0.75Co0.25Ga3 solid solution, thin films (typical thickness 40 nm) were fabricated by flash evaporation onto various substrates held at ambient temperature. In this way, the chemical composition of the powders could be transf...
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| Format: | Article |
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Beilstein-Institut
2013-07-01
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| Series: | Beilstein Journal of Nanotechnology |
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| Online Access: | https://doi.org/10.3762/bjnano.4.54 |
| _version_ | 1818325874308546560 |
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| author | Sebastian Schnurr Ulf Wiedwald Paul Ziemann Valeriy Y. Verchenko Andrei V. Shevelkov |
| author_facet | Sebastian Schnurr Ulf Wiedwald Paul Ziemann Valeriy Y. Verchenko Andrei V. Shevelkov |
| author_sort | Sebastian Schnurr |
| collection | DOAJ |
| description | Based on chemically synthesized powders of FeGa3, CoGa3, as well as of a Fe0.75Co0.25Ga3 solid solution, thin films (typical thickness 40 nm) were fabricated by flash evaporation onto various substrates held at ambient temperature. In this way, the chemical composition of the powders could be transferred one-to-one to the films as demonstrated by Rutherford backscattering experiments. The relatively low deposition temperature necessary for conserving the composition leads, however, to ‘X-ray amorphous’ film structures with immediate consequences on their transport properties: A practically temperature-independent electrical resistivity of ρ = 200 μΩ·cm for CoGa3 and an electrical resistivity of about 600 μΩ·cm with a small negative temperature dependence for FeGa3. The observed values and temperature dependencies are typical of high-resistivity metallic glasses. This is especially surprising in the case of FeGa3, which as crystalline bulk material exhibits a semiconducting behavior, though with a small gap of 0.3 eV. Also the thermoelectric performance complies with that of metallic glasses: Small negative Seebeck coefficients of the order of −6 μV/K at 300 K with almost linear temperature dependence in the range 10 K ≤ T ≤ 300 K. |
| first_indexed | 2024-12-13T11:51:25Z |
| format | Article |
| id | doaj.art-9007f73b41a74e77acabc12589b6eb15 |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-13T11:51:25Z |
| publishDate | 2013-07-01 |
| publisher | Beilstein-Institut |
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| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-9007f73b41a74e77acabc12589b6eb152022-12-21T23:47:20ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862013-07-014146146610.3762/bjnano.4.542190-4286-4-54Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin filmsSebastian Schnurr0Ulf Wiedwald1Paul Ziemann2Valeriy Y. Verchenko3Andrei V. Shevelkov4Institute of Solid State Physics, Ulm University, D-89081 Ulm, GermanyInstitute of Solid State Physics, Ulm University, D-89081 Ulm, GermanyInstitute of Solid State Physics, Ulm University, D-89081 Ulm, GermanyDepartment of Chemistry, Lomonosov Moscow State University, Moscow 119991, RussiaDepartment of Chemistry, Lomonosov Moscow State University, Moscow 119991, RussiaBased on chemically synthesized powders of FeGa3, CoGa3, as well as of a Fe0.75Co0.25Ga3 solid solution, thin films (typical thickness 40 nm) were fabricated by flash evaporation onto various substrates held at ambient temperature. In this way, the chemical composition of the powders could be transferred one-to-one to the films as demonstrated by Rutherford backscattering experiments. The relatively low deposition temperature necessary for conserving the composition leads, however, to ‘X-ray amorphous’ film structures with immediate consequences on their transport properties: A practically temperature-independent electrical resistivity of ρ = 200 μΩ·cm for CoGa3 and an electrical resistivity of about 600 μΩ·cm with a small negative temperature dependence for FeGa3. The observed values and temperature dependencies are typical of high-resistivity metallic glasses. This is especially surprising in the case of FeGa3, which as crystalline bulk material exhibits a semiconducting behavior, though with a small gap of 0.3 eV. Also the thermoelectric performance complies with that of metallic glasses: Small negative Seebeck coefficients of the order of −6 μV/K at 300 K with almost linear temperature dependence in the range 10 K ≤ T ≤ 300 K.https://doi.org/10.3762/bjnano.4.54amorphous metal filmsenergy relatedintermetallic compoundsnanomaterialsSeebeck coefficientthermoelectric propertiesthin metal films |
| spellingShingle | Sebastian Schnurr Ulf Wiedwald Paul Ziemann Valeriy Y. Verchenko Andrei V. Shevelkov Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films Beilstein Journal of Nanotechnology amorphous metal films energy related intermetallic compounds nanomaterials Seebeck coefficient thermoelectric properties thin metal films |
| title | Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films |
| title_full | Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films |
| title_fullStr | Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films |
| title_full_unstemmed | Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films |
| title_short | Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films |
| title_sort | structural and thermoelectric properties of tmga3 tm fe co thin films |
| topic | amorphous metal films energy related intermetallic compounds nanomaterials Seebeck coefficient thermoelectric properties thin metal films |
| url | https://doi.org/10.3762/bjnano.4.54 |
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