Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15...
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Beilstein-Institut
2017-01-01
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| Series: | Beilstein Journal of Nanotechnology |
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| Online Access: | https://doi.org/10.3762/bjnano.8.2 |
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| author | Sergei N. Chebotarev Alexander S. Pashchenko Leonid S. Lunin Elena N. Zhivotova Georgy A. Erimeev Marina L. Lunina |
| author_facet | Sergei N. Chebotarev Alexander S. Pashchenko Leonid S. Lunin Elena N. Zhivotova Georgy A. Erimeev Marina L. Lunina |
| author_sort | Sergei N. Chebotarev |
| collection | DOAJ |
| description | The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots. |
| first_indexed | 2024-12-14T14:10:04Z |
| format | Article |
| id | doaj.art-900e9b5fa40e416bb164ff9b82da6ecf |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-14T14:10:04Z |
| publishDate | 2017-01-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-900e9b5fa40e416bb164ff9b82da6ecf2022-12-21T22:58:20ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862017-01-0181122010.3762/bjnano.8.22190-4286-8-2Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputteringSergei N. Chebotarev0Alexander S. Pashchenko1Leonid S. Lunin2Elena N. Zhivotova3Georgy A. Erimeev4Marina L. Lunina5Department of Physics and Electronics, Platov South-Russian State Polytechnic University (NPI), 346428, 132, Prosveshchenia str., Novocherkassk, RussiaDepartment of Nanotechnology and Solar Energy, Southern Scientific Center of Russian Academy of Sciences, 344006, 41, Chekhov Avenue, Rostov-on-Don, RussiaDepartment of Nanotechnology and Solar Energy, Southern Scientific Center of Russian Academy of Sciences, 344006, 41, Chekhov Avenue, Rostov-on-Don, RussiaDepartment of Physics and Electronics, Platov South-Russian State Polytechnic University (NPI), 346428, 132, Prosveshchenia str., Novocherkassk, RussiaDepartment of Physics and Electronics, Platov South-Russian State Polytechnic University (NPI), 346428, 132, Prosveshchenia str., Novocherkassk, RussiaDepartment of Nanotechnology and Solar Energy, Southern Scientific Center of Russian Academy of Sciences, 344006, 41, Chekhov Avenue, Rostov-on-Don, RussiaThe features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.https://doi.org/10.3762/bjnano.8.23D growthdopingion-beam sputteringphotoluminescencequantum dots |
| spellingShingle | Sergei N. Chebotarev Alexander S. Pashchenko Leonid S. Lunin Elena N. Zhivotova Georgy A. Erimeev Marina L. Lunina Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering Beilstein Journal of Nanotechnology 3D growth doping ion-beam sputtering photoluminescence quantum dots |
| title | Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering |
| title_full | Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering |
| title_fullStr | Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering |
| title_full_unstemmed | Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering |
| title_short | Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering |
| title_sort | obtaining and doping of inas qd gaas 001 nanostructures by ion beam sputtering |
| topic | 3D growth doping ion-beam sputtering photoluminescence quantum dots |
| url | https://doi.org/10.3762/bjnano.8.2 |
| work_keys_str_mv | AT sergeinchebotarev obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering AT alexanderspashchenko obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering AT leonidslunin obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering AT elenanzhivotova obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering AT georgyaerimeev obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering AT marinallunina obtaininganddopingofinasqdgaas001nanostructuresbyionbeamsputtering |