An Integrated ISFET Sensor Array
A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using cata...
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| Format: | Article |
| Language: | English |
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MDPI AG
2009-11-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/9/11/8831/ |
| _version_ | 1817995667818151936 |
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| author | Kazuo Nakazato |
| author_facet | Kazuo Nakazato |
| author_sort | Kazuo Nakazato |
| collection | DOAJ |
| description | A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs. |
| first_indexed | 2024-04-14T02:09:24Z |
| format | Article |
| id | doaj.art-902e8f7512154fb9bce2183e7520d759 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T02:09:24Z |
| publishDate | 2009-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-902e8f7512154fb9bce2183e7520d7592022-12-22T02:18:28ZengMDPI AGSensors1424-82202009-11-019118831885110.3390/s91108831An Integrated ISFET Sensor ArrayKazuo NakazatoA monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.http://www.mdpi.com/1424-8220/9/11/8831/ISFETbiosensor arraysource-drain followerCMOS biotechnology |
| spellingShingle | Kazuo Nakazato An Integrated ISFET Sensor Array Sensors ISFET biosensor array source-drain follower CMOS biotechnology |
| title | An Integrated ISFET Sensor Array |
| title_full | An Integrated ISFET Sensor Array |
| title_fullStr | An Integrated ISFET Sensor Array |
| title_full_unstemmed | An Integrated ISFET Sensor Array |
| title_short | An Integrated ISFET Sensor Array |
| title_sort | integrated isfet sensor array |
| topic | ISFET biosensor array source-drain follower CMOS biotechnology |
| url | http://www.mdpi.com/1424-8220/9/11/8831/ |
| work_keys_str_mv | AT kazuonakazato anintegratedisfetsensorarray AT kazuonakazato integratedisfetsensorarray |