Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO<sub>x</sub>N<sub>y</sub> MIS Gate

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO<sub>x</sub>N<sub>y</sub> MIS Gate

This study investigated the effects of a thin aluminum oxynitride (AlO<sub>x</sub>N<sub>y</sub>) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC...

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Bibliographic Details
Main Authors:	Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, Kwang-Seok Seo, Ho-Young Cha
Format:	Article
Language:	English
Published:	MDPI AG 2020-03-01
Series:	Materials
Subjects:	aluminum oxynitride GaN-on-SiC metal-insulator-semiconductor high electron mobility transistor gate recess leakage current
Online Access:	https://www.mdpi.com/1996-1944/13/7/1538

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