FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE
The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/484 |
| _version_ | 1797881234104254464 |
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| author | E. B. Chubenko S. V. Redko A. I. Sherstnyov V. A. Petrovich V. P. Bondarenko |
| author_facet | E. B. Chubenko S. V. Redko A. I. Sherstnyov V. A. Petrovich V. P. Bondarenko |
| author_sort | E. B. Chubenko |
| collection | DOAJ |
| description | The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more uniform structure than porous silicon layers obtained in linear galvanostatic mode. Porous silicon templates with aspect ratio up to 1:500 were formed with the developed approach. |
| first_indexed | 2024-04-10T03:15:38Z |
| format | Article |
| id | doaj.art-908ff34480004edb9dc253a076eb443d |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:15:38Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-908ff34480004edb9dc253a076eb443d2023-03-13T07:33:12ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01031117483FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODEE. B. Chubenko0S. V. Redko1A. I. Sherstnyov2V. A. Petrovich3V. P. Bondarenko4Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more uniform structure than porous silicon layers obtained in linear galvanostatic mode. Porous silicon templates with aspect ratio up to 1:500 were formed with the developed approach.https://doklady.bsuir.by/jour/article/view/484пористый кремнийимпульсное электрохимическое анодированиеполупроводниковая пористая матрица |
| spellingShingle | E. B. Chubenko S. V. Redko A. I. Sherstnyov V. A. Petrovich V. P. Bondarenko FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki пористый кремний импульсное электрохимическое анодирование полупроводниковая пористая матрица |
| title | FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE |
| title_full | FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE |
| title_fullStr | FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE |
| title_full_unstemmed | FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE |
| title_short | FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE |
| title_sort | formation of porous silicon in the pulsed galvanostatic mode |
| topic | пористый кремний импульсное электрохимическое анодирование полупроводниковая пористая матрица |
| url | https://doklady.bsuir.by/jour/article/view/484 |
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