n-Type narrow band gap A3InAs3 (A = Sr and Eu) Zintl phase semiconductors for optoelectronic and thermoelectric applications

Optoelectronic and thermoelectric properties of A3InAs3 (A = Sr and Eu) Zintl compounds are investigated using FP-LAPW method with LDA, GGA and mBJ potentials for Sr3InAs3 in addition with Hubbard (U) for Eu3InAs3 based on DFT. Electronic properties reveal that both the compounds are direct bandgap...

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Bibliographic Details
Main Authors: Zainab Mufarreh Elqahtani, Salma Aman, Shahid Mehmood, Zahid Ali, Abid Hussanan, Naseeb Ahmad, Sultan Alomairy, M. S. Al-Buriahi, Z. A. Alrowaili, Hafiz Muhammad Tahir Farid
Format: Article
Language:English
Published: Taylor & Francis Group 2022-12-01
Series:Journal of Taibah University for Science
Subjects:
Online Access:https://www.tandfonline.com/doi/10.1080/16583655.2022.2099200

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