Low temperature synthesized indium tin oxide nanowires
Directional indium tin oxide (ITO) nanowires were successfully grown on SiO2/Si at temperatures ranging fromapproximately 640oC to 800oC and pressure of about 300 mtorr using SnO and In powders. The results show that growthtemperature strongly affects the morphology and composition of ITO nanostruct...
Main Authors: | Tula Jutarosaga, Steven M. Smith, Yong Liang |
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Format: | Article |
Language: | English |
Published: |
Prince of Songkla University
2009-01-01
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Series: | Songklanakarin Journal of Science and Technology (SJST) |
Subjects: | |
Online Access: | http://www.rdoapp.psu.ac.th/sjst/ejournal/journal/31-1/0125-3395-31-1-111-115.pdf |
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