Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics of the MQW...

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Main Authors: Dong Liu, Sang June Cho, Huilong Zhang, Corey R. Carlos, Akhil R. K. Kalapala, Jeongpil Park, Jisoo Kim, Rafael Dalmau, Jiarui Gong, Baxter Moody, Xudong Wang, John D. Albrecht, Weidong Zhou, Zhenqiang Ma
Format: Article
Language:English
Published: AIP Publishing LLC 2019-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5108743
_version_ 1811342665006972928
author Dong Liu
Sang June Cho
Huilong Zhang
Corey R. Carlos
Akhil R. K. Kalapala
Jeongpil Park
Jisoo Kim
Rafael Dalmau
Jiarui Gong
Baxter Moody
Xudong Wang
John D. Albrecht
Weidong Zhou
Zhenqiang Ma
author_facet Dong Liu
Sang June Cho
Huilong Zhang
Corey R. Carlos
Akhil R. K. Kalapala
Jeongpil Park
Jisoo Kim
Rafael Dalmau
Jiarui Gong
Baxter Moody
Xudong Wang
John D. Albrecht
Weidong Zhou
Zhenqiang Ma
author_sort Dong Liu
collection DOAJ
description We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics of the MQW LED structures were examined via conductive atomic force microscopy (CAFM). We found that the disparity between photoluminescence (PL) and electroluminescence (EL) spectra in terms of light emission output and wavelength shift are attributed to the existence of the surface hillocks, especially to the ones that have open-core dislocations. The open-core dislocations form current leakage paths through their defect states and the composition inhomogeneity (i.e., Ga rich) at the dislocation sites are responsible for the light emission at longer wavelengths.
first_indexed 2024-04-13T19:14:48Z
format Article
id doaj.art-90b50bba57e543f78a4e133449b42ccc
institution Directory Open Access Journal
issn 2158-3226
language English
last_indexed 2024-04-13T19:14:48Z
publishDate 2019-08-01
publisher AIP Publishing LLC
record_format Article
series AIP Advances
spelling doaj.art-90b50bba57e543f78a4e133449b42ccc2022-12-22T02:33:43ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085128085128-610.1063/1.5108743114908ADVInfluences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDsDong Liu0Sang June Cho1Huilong Zhang2Corey R. Carlos3Akhil R. K. Kalapala4Jeongpil Park5Jisoo Kim6Rafael Dalmau7Jiarui Gong8Baxter Moody9Xudong Wang10John D. Albrecht11Weidong Zhou12Zhenqiang Ma13Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Material Science Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical Engineering, University of Texas at Arlington, 500 South Cooper Street, Arlington, Texas 76019, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USAHexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USAHexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, USADepartment of Material Science Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, Michigan State University, 428 S. Shaw Lane, East Lansing, Michigan 48824, USADepartment of Electrical Engineering, University of Texas at Arlington, 500 South Cooper Street, Arlington, Texas 76019, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USAWe investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics of the MQW LED structures were examined via conductive atomic force microscopy (CAFM). We found that the disparity between photoluminescence (PL) and electroluminescence (EL) spectra in terms of light emission output and wavelength shift are attributed to the existence of the surface hillocks, especially to the ones that have open-core dislocations. The open-core dislocations form current leakage paths through their defect states and the composition inhomogeneity (i.e., Ga rich) at the dislocation sites are responsible for the light emission at longer wavelengths.http://dx.doi.org/10.1063/1.5108743
spellingShingle Dong Liu
Sang June Cho
Huilong Zhang
Corey R. Carlos
Akhil R. K. Kalapala
Jeongpil Park
Jisoo Kim
Rafael Dalmau
Jiarui Gong
Baxter Moody
Xudong Wang
John D. Albrecht
Weidong Zhou
Zhenqiang Ma
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
AIP Advances
title Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
title_full Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
title_fullStr Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
title_full_unstemmed Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
title_short Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
title_sort influences of screw dislocations on electroluminescence of algan aln based uvc leds
url http://dx.doi.org/10.1063/1.5108743
work_keys_str_mv AT dongliu influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT sangjunecho influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT huilongzhang influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT coreyrcarlos influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT akhilrkkalapala influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT jeongpilpark influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT jisookim influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT rafaeldalmau influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT jiaruigong influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT baxtermoody influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT xudongwang influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT johndalbrecht influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT weidongzhou influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds
AT zhenqiangma influencesofscrewdislocationsonelectroluminescenceofalganalnbaseduvcleds