Ultra-highly efficient SOT-writing in MTJs with strain-induced magnetic anisotropy
In order to break through limits of conventional MRAMs, MTJs with strain-induced magnetic anisotropy were intensively tested as SOT-MRAM cells. Small critical switching-current of 10–25 μA and switching-voltage of about 0.055 V, and almost no retention energy dependence of them were predicted and co...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000654 |