Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions
We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemica...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2016-01-01
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| Series: | EPJ Photovoltaics |
| Online Access: | http://dx.doi.org/10.1051/epjpv/2015011 |
| _version_ | 1818642794166616064 |
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| author | Abolmasov Sergey Cabarrocas Pere Roca i Chatterjee Parsathi |
| author_facet | Abolmasov Sergey Cabarrocas Pere Roca i Chatterjee Parsathi |
| author_sort | Abolmasov Sergey |
| collection | DOAJ |
| description | We have combined recent experimental developments in our laboratory with modelling to
devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon
(a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced
chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas
flow ratios. A detailed electrical-optical simulator was used to examine the effect of
using wide band gap P-and N-doped μc-SiOx:H layers, as well as a
MgF2
anti-reflection coating (ARC) on cell performance. We find that with the best quality
a-Si:H so far produced in our laboratory and optimised deposition parameters for the
corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high
stabilised defect density of a-Si:H, although this landmark has been achieved in some
laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous
silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions
close to powder formation, has been developed in our laboratory. This material has been
shown to have a lower initial and stabilised defect density as well as higher hole
mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised
efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP
configuration to reduce the P/I interface defects and combined with P- and N-doped
μc-SiOx:H layers and a MgF2 ARC. |
| first_indexed | 2024-12-16T23:48:43Z |
| format | Article |
| id | doaj.art-90bd054977114bcdb1913e96eaf2bee0 |
| institution | Directory Open Access Journal |
| issn | 2105-0716 |
| language | English |
| last_indexed | 2024-12-16T23:48:43Z |
| publishDate | 2016-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj.art-90bd054977114bcdb1913e96eaf2bee02022-12-21T22:11:24ZengEDP SciencesEPJ Photovoltaics2105-07162016-01-0177030210.1051/epjpv/2015011pv150010Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictionsAbolmasov SergeyCabarrocas Pere Roca i0Chatterjee Parsathi1LPICM, CNRS, Ecole Polytechnique, Université Paris-SaclayLPICM, CNRS, Ecole Polytechnique, Université Paris-SaclayWe have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.http://dx.doi.org/10.1051/epjpv/2015011 |
| spellingShingle | Abolmasov Sergey Cabarrocas Pere Roca i Chatterjee Parsathi Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions EPJ Photovoltaics |
| title | Towards 12% stabilised efficiency in single junction
polymorphous silicon solar cells: experimental developments and model
predictions |
| title_full | Towards 12% stabilised efficiency in single junction
polymorphous silicon solar cells: experimental developments and model
predictions |
| title_fullStr | Towards 12% stabilised efficiency in single junction
polymorphous silicon solar cells: experimental developments and model
predictions |
| title_full_unstemmed | Towards 12% stabilised efficiency in single junction
polymorphous silicon solar cells: experimental developments and model
predictions |
| title_short | Towards 12% stabilised efficiency in single junction
polymorphous silicon solar cells: experimental developments and model
predictions |
| title_sort | towards 12 stabilised efficiency in single junction polymorphous silicon solar cells experimental developments and model predictions |
| url | http://dx.doi.org/10.1051/epjpv/2015011 |
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