Research Update: Doping ZnO and TiO2 for solar cells
ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4833475 |
| _version_ | 1818553028623466496 |
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| author | Robert L. Z. Hoye Kevin P. Musselman Judith L. MacManus-Driscoll |
| author_facet | Robert L. Z. Hoye Kevin P. Musselman Judith L. MacManus-Driscoll |
| author_sort | Robert L. Z. Hoye |
| collection | DOAJ |
| description | ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented. |
| first_indexed | 2024-12-12T09:20:43Z |
| format | Article |
| id | doaj.art-90e47216342f49d98b9be013194e014e |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T09:20:43Z |
| publishDate | 2013-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-90e47216342f49d98b9be013194e014e2022-12-22T00:29:14ZengAIP Publishing LLCAPL Materials2166-532X2013-12-0116060701060701-1110.1063/1.4833475003306APMResearch Update: Doping ZnO and TiO2 for solar cellsRobert L. Z. Hoye0Kevin P. Musselman1Judith L. MacManus-Driscoll2Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.http://dx.doi.org/10.1063/1.4833475 |
| spellingShingle | Robert L. Z. Hoye Kevin P. Musselman Judith L. MacManus-Driscoll Research Update: Doping ZnO and TiO2 for solar cells APL Materials |
| title | Research Update: Doping ZnO and TiO2 for solar cells |
| title_full | Research Update: Doping ZnO and TiO2 for solar cells |
| title_fullStr | Research Update: Doping ZnO and TiO2 for solar cells |
| title_full_unstemmed | Research Update: Doping ZnO and TiO2 for solar cells |
| title_short | Research Update: Doping ZnO and TiO2 for solar cells |
| title_sort | research update doping zno and tio2 for solar cells |
| url | http://dx.doi.org/10.1063/1.4833475 |
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