A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation
Abstract In this study, the low-energy radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different radiation behaviors are explored. It is found that the radiation resistance of the Ge atoms that are around the i...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2547-9 |
| _version_ | 1797763571606618112 |
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| author | Ming Jiang Haiyan Xiao Shuming Peng Guixia Yang Zijiang Liu Liang Qiao Xiaotao Zu |
| author_facet | Ming Jiang Haiyan Xiao Shuming Peng Guixia Yang Zijiang Liu Liang Qiao Xiaotao Zu |
| author_sort | Ming Jiang |
| collection | DOAJ |
| description | Abstract In this study, the low-energy radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different radiation behaviors are explored. It is found that the radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under radiation environment. |
| first_indexed | 2024-03-12T19:43:24Z |
| format | Article |
| id | doaj.art-90ee0d693ac1497eb1998688008bda23 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:43:24Z |
| publishDate | 2018-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-90ee0d693ac1497eb1998688008bda232023-08-02T03:40:39ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-05-0113111110.1186/s11671-018-2547-9A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrradiationMing Jiang0Haiyan Xiao1Shuming Peng2Guixia Yang3Zijiang Liu4Liang Qiao5Xiaotao Zu6School of Physics, University of Electronic Science and Technology of ChinaSchool of Physics, University of Electronic Science and Technology of ChinaInstitute of Nuclear Physics and Chemistry, Chinese Academy of Engineering PhysicsInstitute of Nuclear Physics and Chemistry, Chinese Academy of Engineering PhysicsDepartment of Physics, Lanzhou City UniversitySchool of Physics, University of Electronic Science and Technology of ChinaSchool of Physics, University of Electronic Science and Technology of ChinaAbstract In this study, the low-energy radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different radiation behaviors are explored. It is found that the radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under radiation environment.http://link.springer.com/article/10.1186/s11671-018-2547-9SuperlatticeSi and GeRadiationDefect formation and migration |
| spellingShingle | Ming Jiang Haiyan Xiao Shuming Peng Guixia Yang Zijiang Liu Liang Qiao Xiaotao Zu A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation Nanoscale Research Letters Superlattice Si and Ge Radiation Defect formation and migration |
| title | A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation |
| title_full | A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation |
| title_fullStr | A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation |
| title_full_unstemmed | A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation |
| title_short | A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation |
| title_sort | theoretical simulation of the radiation responses of si ge and si ge superlattice to low energy irradiation |
| topic | Superlattice Si and Ge Radiation Defect formation and migration |
| url | http://link.springer.com/article/10.1186/s11671-018-2547-9 |
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