Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties of interacting metal and semiconductor properties....
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| Format: | Article |
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IOP Publishing
2023-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ace0a4 |
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| author | Min-Yeong Kim Dong-Wook Byun Geon-Hee Lee Sujitra Pookpanratana Qiliang Li Sang-Mo Koo |
| author_facet | Min-Yeong Kim Dong-Wook Byun Geon-Hee Lee Sujitra Pookpanratana Qiliang Li Sang-Mo Koo |
| author_sort | Min-Yeong Kim |
| collection | DOAJ |
| description | The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties of interacting metal and semiconductor properties. Herein, we studied the carrier-transport mechanisms and electrical characteristics at room and elevated temperatures. These SBDs employ pre-treated Ga _2 O _3 thin films and either Ni or Au Schottky contacts. The SBDs pre-treated (pre-T) via annealing at 900 °C under an N _2 atmosphere for the Ni contact showed highest on/off ratio at room temperature. They also demonstrated ideality factors and Schottky barrier heights (SBHs) that remained relatively stable between 298 K and 523 K. To ascertain the SBH, ideality factors (n) derived from the thermionic emission (TE) and thermionic field emission (TFE) models were used, and results were subsequently compared. Moreover, SBDs employing Ni as the anode material exhibited lower SBHs than those employing Au. The pre-T Ni SBD was best described by the TFE model, wherein the SBH and ideality factor varied by 0.14 eV and 0.13, respectively, between 298 K and 523 K. Conversely, for pre-T Au, untreated Ni, and untreated Au SBDs, neither TE and TFE provided a satisfactory fit due to the ideality factor is greater than 2 at room temperature and the variation of SBH and n with temperature. These suggests that the transport mechanism should be described by other physical mechanisms. Without pre-treatment, both the Ni and Au SBDs exhibited more significant variation in the SBH and n with temperature. SBHs values were determined using measurement of current, capacitance and x-ray photoelectron spectroscopy, and were found to depend on the interface quality, indicating inhomogeneous SBH. Our results suggest that the use of annealing pre-treatments and anode metals with low work functions holds considerable potential for reducing Schottky barrier heights in Schottky diodes, thereby enhancing their electrical performance. |
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| language | English |
| last_indexed | 2024-03-12T15:36:29Z |
| publishDate | 2023-01-01 |
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| spelling | doaj.art-91305143f8744e0eaa4abfed36a985be2023-08-09T16:10:55ZengIOP PublishingMaterials Research Express2053-15912023-01-0110707590210.1088/2053-1591/ace0a4Schottky barrier heights and electronic transport in Ga2O3 Schottky diodesMin-Yeong Kim0Dong-Wook Byun1Geon-Hee Lee2Sujitra Pookpanratana3Qiliang Li4Sang-Mo Koo5https://orcid.org/0000-0002-9827-9219Department of Electronic Materials Engineering, Kwangwoon University , Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University , Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University , Seoul 01897, Republic of KoreaNanoscale Device and Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, United States of AmericaNanoscale Device and Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, United States of America; Department of Electrical and Computer Engineering, George Mason University , Fairfax, VA 22030, United States of AmericaDepartment of Electronic Materials Engineering, Kwangwoon University , Seoul 01897, Republic of KoreaThe Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties of interacting metal and semiconductor properties. Herein, we studied the carrier-transport mechanisms and electrical characteristics at room and elevated temperatures. These SBDs employ pre-treated Ga _2 O _3 thin films and either Ni or Au Schottky contacts. The SBDs pre-treated (pre-T) via annealing at 900 °C under an N _2 atmosphere for the Ni contact showed highest on/off ratio at room temperature. They also demonstrated ideality factors and Schottky barrier heights (SBHs) that remained relatively stable between 298 K and 523 K. To ascertain the SBH, ideality factors (n) derived from the thermionic emission (TE) and thermionic field emission (TFE) models were used, and results were subsequently compared. Moreover, SBDs employing Ni as the anode material exhibited lower SBHs than those employing Au. The pre-T Ni SBD was best described by the TFE model, wherein the SBH and ideality factor varied by 0.14 eV and 0.13, respectively, between 298 K and 523 K. Conversely, for pre-T Au, untreated Ni, and untreated Au SBDs, neither TE and TFE provided a satisfactory fit due to the ideality factor is greater than 2 at room temperature and the variation of SBH and n with temperature. These suggests that the transport mechanism should be described by other physical mechanisms. Without pre-treatment, both the Ni and Au SBDs exhibited more significant variation in the SBH and n with temperature. SBHs values were determined using measurement of current, capacitance and x-ray photoelectron spectroscopy, and were found to depend on the interface quality, indicating inhomogeneous SBH. Our results suggest that the use of annealing pre-treatments and anode metals with low work functions holds considerable potential for reducing Schottky barrier heights in Schottky diodes, thereby enhancing their electrical performance.https://doi.org/10.1088/2053-1591/ace0a4Ga2O3schottky diodescarrier transport mechanismschottky barrier height |
| spellingShingle | Min-Yeong Kim Dong-Wook Byun Geon-Hee Lee Sujitra Pookpanratana Qiliang Li Sang-Mo Koo Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes Materials Research Express Ga2O3 schottky diodes carrier transport mechanism schottky barrier height |
| title | Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes |
| title_full | Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes |
| title_fullStr | Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes |
| title_full_unstemmed | Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes |
| title_short | Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes |
| title_sort | schottky barrier heights and electronic transport in ga2o3 schottky diodes |
| topic | Ga2O3 schottky diodes carrier transport mechanism schottky barrier height |
| url | https://doi.org/10.1088/2053-1591/ace0a4 |
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