Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes

Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes

The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties of interacting metal and semiconductor properties....

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Bibliographic Details
Main Authors: Min-Yeong Kim, Dong-Wook Byun, Geon-Hee Lee, Sujitra Pookpanratana, Qiliang Li, Sang-Mo Koo
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
Ga2O3
schottky diodes
carrier transport mechanism
schottky barrier height
Online Access:https://doi.org/10.1088/2053-1591/ace0a4

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