Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure

Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure

Abstract This study reports the optoelectronic characterization of few‐layer ReSe2field effect transistors at different pressures. The output curves reveal dominant n‐type behavior and a low Schottky barrier at the metal contacts. The transfer curves show a significant hysteresis that can be exploit...

Full description

Bibliographic Details
Main Authors: Kimberly Intonti, Enver Faella, Loredana Viscardi, Arun Kumar, Ofelia Durante, Filippo Giubileo, Maurizio Passacantando, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Format: Article
Language:English
Published: Wiley-VCH 2023-08-01
Series:Advanced Electronic Materials
Subjects:
field effect transistors
memories
negative photoconductivity
photodetectors
rhenium diselenide
Online Access:https://doi.org/10.1002/aelm.202300066

Internet

https://doi.org/10.1002/aelm.202300066

Similar Items