High Ion/Ioff current ratio graphene field effect transistor: the role of line defect
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Beilstein-Institut
2015-10-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.6.210 |
| Summary: | The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the Ion/Ioff ratio in graphene transistors with ELDs enhances their applicability in digital devices. |
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| ISSN: | 2190-4286 |