High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of...

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Bibliographic Details
Main Authors: Mohammad Hadi Tajarrod, Hassan Rasooli Saghai
Format: Article
Language:English
Published: Beilstein-Institut 2015-10-01
Series:Beilstein Journal of Nanotechnology
Subjects:
field effect transistor
graphene
line defect
Online Access:https://doi.org/10.3762/bjnano.6.210

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