High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal
This paper reports an intracavity terahertz parametric source based on the stimulated polariton scattering in RbTiOPO<sub>4</sub> crystal with a high repetition rate and a high average power. The side pumping for the gain medium by laser diodes is adopted to get a higher fundamental powe...
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IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9039761/ |
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| author | Feilong Gao Xingyu Zhang Zhenhua Cong Zhaojun Liu Xiaohan Chen Zengguang Qin Peng Wang Jinjin Xu Weitao Wang Shaojun Zhang |
| author_facet | Feilong Gao Xingyu Zhang Zhenhua Cong Zhaojun Liu Xiaohan Chen Zengguang Qin Peng Wang Jinjin Xu Weitao Wang Shaojun Zhang |
| author_sort | Feilong Gao |
| collection | DOAJ |
| description | This paper reports an intracavity terahertz parametric source based on the stimulated polariton scattering in RbTiOPO<sub>4</sub> crystal with a high repetition rate and a high average power. The side pumping for the gain medium by laser diodes is adopted to get a higher fundamental power and a larger fundamental laser beam size than those in the diode-end-pumping in order to improve the THz output power. A non-collinear convex-plane fundamental cavity is adopted so that the thermal effect can be offset in some degree and the fundamental beam size is further increased. The obtained maximum average THz output power is 367 μW at 3.88 THz when the diode pump power is 105 W and the pulse repetition frequency (PRF) is 7 kHz. The terahertz power of 367 μW is the highest ever obtained in SPS sources. |
| first_indexed | 2024-12-14T12:02:18Z |
| format | Article |
| id | doaj.art-917e8d7012cb4c41938b9def62769792 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T12:02:18Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj.art-917e8d7012cb4c41938b9def627697922022-12-21T23:01:57ZengIEEEIEEE Photonics Journal1943-06552020-01-011221910.1109/JPHOT.2020.29815279039761High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> CrystalFeilong Gao0https://orcid.org/0000-0001-5831-0755Xingyu Zhang1https://orcid.org/0000-0003-2195-8544Zhenhua Cong2https://orcid.org/0000-0002-7675-5501Zhaojun Liu3https://orcid.org/0000-0003-3502-9666Xiaohan Chen4Zengguang Qin5https://orcid.org/0000-0002-2915-6661Peng Wang6Jinjin Xu7Weitao Wang8https://orcid.org/0000-0002-4847-514XShaojun Zhang9Shandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaShandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Qingdao, ChinaLaser Institute of Shandong Academy of Sciences, Jinan, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaThis paper reports an intracavity terahertz parametric source based on the stimulated polariton scattering in RbTiOPO<sub>4</sub> crystal with a high repetition rate and a high average power. The side pumping for the gain medium by laser diodes is adopted to get a higher fundamental power and a larger fundamental laser beam size than those in the diode-end-pumping in order to improve the THz output power. A non-collinear convex-plane fundamental cavity is adopted so that the thermal effect can be offset in some degree and the fundamental beam size is further increased. The obtained maximum average THz output power is 367 μW at 3.88 THz when the diode pump power is 105 W and the pulse repetition frequency (PRF) is 7 kHz. The terahertz power of 367 μW is the highest ever obtained in SPS sources.https://ieeexplore.ieee.org/document/9039761/Nonlinear opticsTHz sourcesstimulated polariton scattering |
| spellingShingle | Feilong Gao Xingyu Zhang Zhenhua Cong Zhaojun Liu Xiaohan Chen Zengguang Qin Peng Wang Jinjin Xu Weitao Wang Shaojun Zhang High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal IEEE Photonics Journal Nonlinear optics THz sources stimulated polariton scattering |
| title | High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal |
| title_full | High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal |
| title_fullStr | High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal |
| title_full_unstemmed | High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal |
| title_short | High Average Power Diode-Side-Pumped Intracavity Terahertz Parametric Source Based on Stimulated Polariton Scattering in RbTiOPO<sub>4</sub> Crystal |
| title_sort | high average power diode side pumped intracavity terahertz parametric source based on stimulated polariton scattering in rbtiopo sub 4 sub crystal |
| topic | Nonlinear optics THz sources stimulated polariton scattering |
| url | https://ieeexplore.ieee.org/document/9039761/ |
| work_keys_str_mv | AT feilonggao highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT xingyuzhang highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT zhenhuacong highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT zhaojunliu highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT xiaohanchen highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT zengguangqin highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT pengwang highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT jinjinxu highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT weitaowang highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal AT shaojunzhang highaveragepowerdiodesidepumpedintracavityterahertzparametricsourcebasedonstimulatedpolaritonscatteringinrbtioposub4subcrystal |