Carrier mobilities of (001) cadmium arsenide films

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd3As2) grown by molecular beam epitaxy on lattice-matched III–V AlxIn1−xSb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on thei...

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Main Authors: Manik Goyal, Salva Salmani-Rezaie, Tyler N. Pardue, Binghao Guo, David A. Kealhofer, Susanne Stemmer
Format: Article
Language:English
Published: AIP Publishing LLC 2020-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0002771
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author Manik Goyal
Salva Salmani-Rezaie
Tyler N. Pardue
Binghao Guo
David A. Kealhofer
Susanne Stemmer
author_facet Manik Goyal
Salva Salmani-Rezaie
Tyler N. Pardue
Binghao Guo
David A. Kealhofer
Susanne Stemmer
author_sort Manik Goyal
collection DOAJ
description We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd3As2) grown by molecular beam epitaxy on lattice-matched III–V AlxIn1−xSb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd3As2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd3As2 films exhibit electron mobilities of up to 41 000 cm2 V−1 s−1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.
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spelling doaj.art-91c694bad21b4a77b9a786f8fe822b6c2022-12-22T01:06:32ZengAIP Publishing LLCAPL Materials2166-532X2020-05-0185051106051106-610.1063/5.0002771Carrier mobilities of (001) cadmium arsenide filmsManik Goyal0Salva Salmani-Rezaie1Tyler N. Pardue2Binghao Guo3David A. Kealhofer4Susanne Stemmer5Materials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAWe investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd3As2) grown by molecular beam epitaxy on lattice-matched III–V AlxIn1−xSb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd3As2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd3As2 films exhibit electron mobilities of up to 41 000 cm2 V−1 s−1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.http://dx.doi.org/10.1063/5.0002771
spellingShingle Manik Goyal
Salva Salmani-Rezaie
Tyler N. Pardue
Binghao Guo
David A. Kealhofer
Susanne Stemmer
Carrier mobilities of (001) cadmium arsenide films
APL Materials
title Carrier mobilities of (001) cadmium arsenide films
title_full Carrier mobilities of (001) cadmium arsenide films
title_fullStr Carrier mobilities of (001) cadmium arsenide films
title_full_unstemmed Carrier mobilities of (001) cadmium arsenide films
title_short Carrier mobilities of (001) cadmium arsenide films
title_sort carrier mobilities of 001 cadmium arsenide films
url http://dx.doi.org/10.1063/5.0002771
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