Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory
In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si)...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/14/2104 |
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| author | Ting-Yu Chang Kuan-Chi Wang Hsien-Yang Liu Jing-Hua Hseun Wei-Cheng Peng Nicolò Ronchi Umberto Celano Kaustuv Banerjee Jan Van Houdt Tian-Li Wu |
| author_facet | Ting-Yu Chang Kuan-Chi Wang Hsien-Yang Liu Jing-Hua Hseun Wei-Cheng Peng Nicolò Ronchi Umberto Celano Kaustuv Banerjee Jan Van Houdt Tian-Li Wu |
| author_sort | Ting-Yu Chang |
| collection | DOAJ |
| description | In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO<sub>2</sub> MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO<sub>2</sub> MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO<sub>2</sub> MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory. |
| first_indexed | 2024-03-11T00:46:07Z |
| format | Article |
| id | doaj.art-91fc261f328846a89ac69a003a88a21d |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T00:46:07Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-91fc261f328846a89ac69a003a88a21d2023-11-18T20:46:03ZengMDPI AGNanomaterials2079-49912023-07-011314210410.3390/nano13142104Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal MemoryTing-Yu Chang0Kuan-Chi Wang1Hsien-Yang Liu2Jing-Hua Hseun3Wei-Cheng Peng4Nicolò Ronchi5Umberto Celano6Kaustuv Banerjee7Jan Van Houdt8Tian-Li Wu9International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanImec, 3000 Leuven, BelgiumImec, 3000 Leuven, BelgiumImec, 3000 Leuven, BelgiumImec, 3000 Leuven, BelgiumInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanIn this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO<sub>2</sub> MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO<sub>2</sub> MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO<sub>2</sub> MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory.https://www.mdpi.com/2079-4991/13/14/2104ferroelectricdomain sizereliability |
| spellingShingle | Ting-Yu Chang Kuan-Chi Wang Hsien-Yang Liu Jing-Hua Hseun Wei-Cheng Peng Nicolò Ronchi Umberto Celano Kaustuv Banerjee Jan Van Houdt Tian-Li Wu Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory Nanomaterials ferroelectric domain size reliability |
| title | Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory |
| title_full | Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory |
| title_fullStr | Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory |
| title_full_unstemmed | Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory |
| title_short | Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory |
| title_sort | comprehensive investigation of constant voltage stress time dependent breakdown and cycle to breakdown reliability in y doped and si doped hfo sub 2 sub metal ferroelectric metal memory |
| topic | ferroelectric domain size reliability |
| url | https://www.mdpi.com/2079-4991/13/14/2104 |
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