Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory

In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si)...

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Main Authors: Ting-Yu Chang, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, Tian-Li Wu
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
ferroelectric
domain size
reliability
Online Access:https://www.mdpi.com/2079-4991/13/14/2104

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