Charge transport properties of CdMnTe radiation detectors
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spa...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2012-10-01
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| Series: | EPJ Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/epjconf/20123502005 |
| _version_ | 1819141608472313856 |
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| author | Prokopovich D. A. Belas E. Bolotnikov A. E. James R. B. Uxa S. Watt G. C. Kim K. Sarbutt A. Reinhard M. I. Boardman D. Rafiei R. |
| author_facet | Prokopovich D. A. Belas E. Bolotnikov A. E. James R. B. Uxa S. Watt G. C. Kim K. Sarbutt A. Reinhard M. I. Boardman D. Rafiei R. |
| author_sort | Prokopovich D. A. |
| collection | DOAJ |
| description | Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature. |
| first_indexed | 2024-12-22T11:57:09Z |
| format | Article |
| id | doaj.art-920cc8964cee48e6ae342c249b2dbcd5 |
| institution | Directory Open Access Journal |
| issn | 2100-014X |
| language | English |
| last_indexed | 2024-12-22T11:57:09Z |
| publishDate | 2012-10-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Web of Conferences |
| spelling | doaj.art-920cc8964cee48e6ae342c249b2dbcd52022-12-21T18:26:43ZengEDP SciencesEPJ Web of Conferences2100-014X2012-10-01350200510.1051/epjconf/20123502005Charge transport properties of CdMnTe radiation detectorsProkopovich D. A.Belas E.Bolotnikov A. E.James R. B.Uxa S.Watt G. C.Kim K.Sarbutt A.Reinhard M. I.Boardman D.Rafiei R.Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature.http://dx.doi.org/10.1051/epjconf/20123502005 |
| spellingShingle | Prokopovich D. A. Belas E. Bolotnikov A. E. James R. B. Uxa S. Watt G. C. Kim K. Sarbutt A. Reinhard M. I. Boardman D. Rafiei R. Charge transport properties of CdMnTe radiation detectors EPJ Web of Conferences |
| title | Charge transport properties of CdMnTe radiation detectors |
| title_full | Charge transport properties of CdMnTe radiation detectors |
| title_fullStr | Charge transport properties of CdMnTe radiation detectors |
| title_full_unstemmed | Charge transport properties of CdMnTe radiation detectors |
| title_short | Charge transport properties of CdMnTe radiation detectors |
| title_sort | charge transport properties of cdmnte radiation detectors |
| url | http://dx.doi.org/10.1051/epjconf/20123502005 |
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