Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature
Abstract Electrostatic gating and light illumination are two widely used stimuli for semiconductor devices. Two‐dimensional electron gas (2DEG) at oxide heterostructures has shown potential in optoelectronics due to its high optical response and gate tuning property. The appearance of high photocond...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-07-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202200087 |
| _version_ | 1827896079082848256 |
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| author | Ripudaman Kaur Anamika Kumari Bibek Ranjan Satapathy Anshu Gupta Sanjeev Kumar Suvankar Chakraverty |
| author_facet | Ripudaman Kaur Anamika Kumari Bibek Ranjan Satapathy Anshu Gupta Sanjeev Kumar Suvankar Chakraverty |
| author_sort | Ripudaman Kaur |
| collection | DOAJ |
| description | Abstract Electrostatic gating and light illumination are two widely used stimuli for semiconductor devices. Two‐dimensional electron gas (2DEG) at oxide heterostructures has shown potential in optoelectronics due to its high optical response and gate tuning property. The appearance of high photoconductivity and persistent photoconductivity at the oxide heterostructure of two insulators LaFeO3 and SrTiO3 is shown here. The photoconductivity has been further tuned using positive and negative back gating. A large change in conductivity has been achieved under the simultaneous application of light and electrostatic gating. A few measurement protocols that manifest possible applications of this interface as memory and switching devices are implemented. |
| first_indexed | 2024-03-12T22:29:44Z |
| format | Article |
| id | doaj.art-920f59a69b294003b95efb6d2cc231b4 |
| institution | Directory Open Access Journal |
| issn | 2751-1200 |
| language | English |
| last_indexed | 2024-03-12T22:29:44Z |
| publishDate | 2023-07-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj.art-920f59a69b294003b95efb6d2cc231b42023-07-21T15:30:32ZengWiley-VCHAdvanced Physics Research2751-12002023-07-0127n/an/a10.1002/apxr.202200087Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room TemperatureRipudaman Kaur0Anamika Kumari1Bibek Ranjan Satapathy2Anshu Gupta3Sanjeev Kumar4Suvankar Chakraverty5Quantum Materials and Devices Unit Institute of Nano Science and Technology Sector‐81 Mohali, Punjab 140306 IndiaQuantum Materials and Devices Unit Institute of Nano Science and Technology Sector‐81 Mohali, Punjab 140306 IndiaQuantum Materials and Devices Unit Institute of Nano Science and Technology Sector‐81 Mohali, Punjab 140306 IndiaQuantum Materials and Devices Unit Institute of Nano Science and Technology Sector‐81 Mohali, Punjab 140306 IndiaApplied Science Department Punjab Engineering College (Deemed to be University) Sector‐12 Chandigarh 160012 IndiaQuantum Materials and Devices Unit Institute of Nano Science and Technology Sector‐81 Mohali, Punjab 140306 IndiaAbstract Electrostatic gating and light illumination are two widely used stimuli for semiconductor devices. Two‐dimensional electron gas (2DEG) at oxide heterostructures has shown potential in optoelectronics due to its high optical response and gate tuning property. The appearance of high photoconductivity and persistent photoconductivity at the oxide heterostructure of two insulators LaFeO3 and SrTiO3 is shown here. The photoconductivity has been further tuned using positive and negative back gating. A large change in conductivity has been achieved under the simultaneous application of light and electrostatic gating. A few measurement protocols that manifest possible applications of this interface as memory and switching devices are implemented.https://doi.org/10.1002/apxr.2022000872DEGoxide interfacespersistent photoconductivity |
| spellingShingle | Ripudaman Kaur Anamika Kumari Bibek Ranjan Satapathy Anshu Gupta Sanjeev Kumar Suvankar Chakraverty Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature Advanced Physics Research 2DEG oxide interfaces persistent photoconductivity |
| title | Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature |
| title_full | Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature |
| title_fullStr | Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature |
| title_full_unstemmed | Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature |
| title_short | Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature |
| title_sort | effect of light and electrostatic gate at oxide interface lafeo3 srtio3 at room temperature |
| topic | 2DEG oxide interfaces persistent photoconductivity |
| url | https://doi.org/10.1002/apxr.202200087 |
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