Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature

Effect of Light and Electrostatic Gate at Oxide Interface LaFeO3–SrTiO3 at Room Temperature

Abstract Electrostatic gating and light illumination are two widely used stimuli for semiconductor devices. Two‐dimensional electron gas (2DEG) at oxide heterostructures has shown potential in optoelectronics due to its high optical response and gate tuning property. The appearance of high photocond...

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Bibliographic Details
Main Authors: Ripudaman Kaur, Anamika Kumari, Bibek Ranjan Satapathy, Anshu Gupta, Sanjeev Kumar, Suvankar Chakraverty
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Physics Research
Subjects:
2DEG
oxide interfaces
persistent photoconductivity
Online Access:https://doi.org/10.1002/apxr.202200087

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