| Summary: | Two methods were proposed and implemented for the fabrication of channel waveguides in an Er-doped Tellurite glass. In the first method, channel waveguides were fabricated by implanting 1.5 MeV and 3.5 MeV energy N<sup>+</sup> ions through a special silicon mask to the glass sample at various fluences. Those waveguides implanted at a fluence of 1.0 × 10<sup>16</sup> ions/cm<sup>2</sup> operated up to 980 nm, and showed green upconversion of the Erbium ions. In the second method, channel waveguides were directly written in the Er<sup>3+</sup>: TeO<sub>2</sub>W<sub>2</sub>O<sub>3</sub> glass using an 11 MeV C<sup>4+</sup> ion microbeam with fluences in the range of 1 · 10<sup>14</sup>–5 · 10<sup>16</sup> ions/cm<sup>2</sup>. The waveguides worked in single mode regime up to the 1540 nm telecom wavelength. Propagation losses were reduced from the 14 dB/cm of the as-irradiated waveguides by stepwise thermal annealing to 1.5 dB/cm at λ = 1400 nm.
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