Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method

Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as...

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Main Authors: K. Balin, R. Rapacz, M. Weis, J. Szade
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4978005
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author K. Balin
R. Rapacz
M. Weis
J. Szade
author_facet K. Balin
R. Rapacz
M. Weis
J. Szade
author_sort K. Balin
collection DOAJ
description Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. For Fe, we found that despite room temperature growth, a reaction between the Fe film and Bi2Te3 takes place, leading to the formation of FeTe and also the precipitation of metallic Bi. For the Eu tri-layer, a reaction also occurs, but the Te chemical state remains intact.
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spelling doaj.art-92257276e12d43aaa6acbb74aa8fc8b72022-12-21T17:44:03ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056323056323-610.1063/1.4978005317791ADVPhysicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy methodK. Balin0R. Rapacz1M. Weis2J. Szade3Silesian Center for Education and Interdisciplinary Research, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, PolandSilesian Center for Education and Interdisciplinary Research, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, PolandSilesian Center for Education and Interdisciplinary Research, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, PolandSilesian Center for Education and Interdisciplinary Research, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, PolandTopological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter systems. Not surprisingly, TI are considered as promising materials for multiple applications in next generation electronic or spintronic devices, as well as for applications in energy conversion, such as thermo-electrics. In this study, we examined the practical challenges associated with the formation of a well-defined junction between a model 3D topological insulator, Bi2Te3, and a metal, Fe or Eu, from which spin injection could potentially be realized. The properties of multilayer systems grown by molecular beam epitaxy (MBE), with Fe or Eu thin films sandwiched between two Bi2Te3 layers, were studied in-situ using electron diffraction and photoelectron spectroscopy. Their magnetic properties were measured using a SQUID magnetometer, while the in-depth chemical structure was assessed using secondary ion mass spectroscopy. An examination of impact of Bi2Te3 structure on chemical stability of the junction area has been realized. For Fe, we found that despite room temperature growth, a reaction between the Fe film and Bi2Te3 takes place, leading to the formation of FeTe and also the precipitation of metallic Bi. For the Eu tri-layer, a reaction also occurs, but the Te chemical state remains intact.http://dx.doi.org/10.1063/1.4978005
spellingShingle K. Balin
R. Rapacz
M. Weis
J. Szade
Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
AIP Advances
title Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
title_full Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
title_fullStr Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
title_full_unstemmed Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
title_short Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
title_sort physicochemical analysis of bi2te3 fe eu bi2te3 junctions grown by molecular beam epitaxy method
url http://dx.doi.org/10.1063/1.4978005
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AT mweis physicochemicalanalysisofbi2te3feeubi2te3junctionsgrownbymolecularbeamepitaxymethod
AT jszade physicochemicalanalysisofbi2te3feeubi2te3junctionsgrownbymolecularbeamepitaxymethod