HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface

The understanding of the origin of a two-dimensional electron gas (2DEG) at the surface of anatase TiO<sub>2</sub> remains a challenging issue. In particular, in TiO<sub>2</sub> ultra-thin films, it is extremely difficult to distinguish intrinsic effects, due to the physics o...

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Main Authors: Mahabul Islam, Piu Rajak, Daniel Knez, Sandeep Kumar Chaluvadi, Pasquale Orgiani, Giorgio Rossi, Goran Dražić, Regina Ciancio
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/12/3/1489
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author Mahabul Islam
Piu Rajak
Daniel Knez
Sandeep Kumar Chaluvadi
Pasquale Orgiani
Giorgio Rossi
Goran Dražić
Regina Ciancio
author_facet Mahabul Islam
Piu Rajak
Daniel Knez
Sandeep Kumar Chaluvadi
Pasquale Orgiani
Giorgio Rossi
Goran Dražić
Regina Ciancio
author_sort Mahabul Islam
collection DOAJ
description The understanding of the origin of a two-dimensional electron gas (2DEG) at the surface of anatase TiO<sub>2</sub> remains a challenging issue. In particular, in TiO<sub>2</sub> ultra-thin films, it is extremely difficult to distinguish intrinsic effects, due to the physics of the TiO<sub>2</sub>, from extrinsic effects, such as those arising from structural defects, dislocations, and the presence of competing phases at the film/substrate interface. It is, therefore, mandatory to unambiguously ascertain the structure of the TiO<sub>2</sub>/substrate interface. In this work, by combining high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), density functional theory calculations, and multislice image simulations, we have investigated the nature of strainless anatase TiO<sub>2</sub> thin films grown on LaAlO<sub>3</sub> substrate. In particular, the presence of oxygen vacancies in anatase TiO<sub>2</sub> has been proved to stabilize the formation of an extra alloy layer, Ti<sub>2</sub>AlO<sub>4</sub>, by means of interface rearrangement. Our results, therefore, elucidate why the growth of anatase TiO<sub>2</sub> directly on LaAlO<sub>3</sub> substrate has required the deposition of a TiO<sub>x</sub> extra-layer to have a 2DEG established, thus confirming the absence of a critical thickness for the TiO<sub>2</sub> to stabilize a 2DEG at its surface. These findings provide fundamental insights on the underlying formation mechanism of the 2DEG in TiO<sub>2</sub>/LAO hetero-interfaces to engineer the 2DEG formation in anatase TiO<sub>2</sub> for tailored applications.
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spelling doaj.art-922f1b6ae1b04979b1e7e2c0b66efecb2023-11-23T15:58:27ZengMDPI AGApplied Sciences2076-34172022-01-01123148910.3390/app12031489HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> HeterointerfaceMahabul Islam0Piu Rajak1Daniel Knez2Sandeep Kumar Chaluvadi3Pasquale Orgiani4Giorgio Rossi5Goran Dražić6Regina Ciancio7Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyIstituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyInstitute for Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz, AustriaIstituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyIstituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyIstituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyDepartment of Materials Chemistry, National Institute of Chemistry, 1001 Ljubljana, SloveniaIstituto Officina dei Materiali-CNR, Area Science Park, S.S.14, Km 163.5, 34149 Trieste, ItalyThe understanding of the origin of a two-dimensional electron gas (2DEG) at the surface of anatase TiO<sub>2</sub> remains a challenging issue. In particular, in TiO<sub>2</sub> ultra-thin films, it is extremely difficult to distinguish intrinsic effects, due to the physics of the TiO<sub>2</sub>, from extrinsic effects, such as those arising from structural defects, dislocations, and the presence of competing phases at the film/substrate interface. It is, therefore, mandatory to unambiguously ascertain the structure of the TiO<sub>2</sub>/substrate interface. In this work, by combining high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), density functional theory calculations, and multislice image simulations, we have investigated the nature of strainless anatase TiO<sub>2</sub> thin films grown on LaAlO<sub>3</sub> substrate. In particular, the presence of oxygen vacancies in anatase TiO<sub>2</sub> has been proved to stabilize the formation of an extra alloy layer, Ti<sub>2</sub>AlO<sub>4</sub>, by means of interface rearrangement. Our results, therefore, elucidate why the growth of anatase TiO<sub>2</sub> directly on LaAlO<sub>3</sub> substrate has required the deposition of a TiO<sub>x</sub> extra-layer to have a 2DEG established, thus confirming the absence of a critical thickness for the TiO<sub>2</sub> to stabilize a 2DEG at its surface. These findings provide fundamental insights on the underlying formation mechanism of the 2DEG in TiO<sub>2</sub>/LAO hetero-interfaces to engineer the 2DEG formation in anatase TiO<sub>2</sub> for tailored applications.https://www.mdpi.com/2076-3417/12/3/1489anatase TiO<sub>2</sub>2DEGoxygen vacanciesheterointerfacesaberration-corrected scanning transmission electron microscopyDFT calculations
spellingShingle Mahabul Islam
Piu Rajak
Daniel Knez
Sandeep Kumar Chaluvadi
Pasquale Orgiani
Giorgio Rossi
Goran Dražić
Regina Ciancio
HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
Applied Sciences
anatase TiO<sub>2</sub>
2DEG
oxygen vacancies
heterointerfaces
aberration-corrected scanning transmission electron microscopy
DFT calculations
title HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
title_full HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
title_fullStr HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
title_full_unstemmed HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
title_short HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO<sub>2</sub>/LaAlO<sub>3</sub> Heterointerface
title_sort haadf stem and ab initio calculations investigation of anatase tio sub 2 sub laalo sub 3 sub heterointerface
topic anatase TiO<sub>2</sub>
2DEG
oxygen vacancies
heterointerfaces
aberration-corrected scanning transmission electron microscopy
DFT calculations
url https://www.mdpi.com/2076-3417/12/3/1489
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