Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2
Decades of studies on thermoelectric materials have enabled the design of high‐performance materials based on basic materials properties, such as bandgap engineering. In general, bandgap energies correspond to the temperature at which the peak thermoelectric performance occurs. For instance, CuGaTe2...
| Main Authors: | , , , , , , , , , , , , , , |
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Wiley-VCH
2023-11-01
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| Series: | Advanced Energy & Sustainability Research |
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| Online Access: | https://doi.org/10.1002/aesr.202300069 |
| _version_ | 1797633814205300736 |
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| author | Danwei Zhang Mingkun Xie Dorsasadat Safanama Kivanc Saglik Xian Yi Tan Samantha Faye Duran Solco Jing Cao Chee Kiang Ivan Tan Hongfei Liu Suxi Wang Qiang Zhu Wen Hui Derrick Fam Qingyu Yan Jing Wu Ady Suwardi |
| author_facet | Danwei Zhang Mingkun Xie Dorsasadat Safanama Kivanc Saglik Xian Yi Tan Samantha Faye Duran Solco Jing Cao Chee Kiang Ivan Tan Hongfei Liu Suxi Wang Qiang Zhu Wen Hui Derrick Fam Qingyu Yan Jing Wu Ady Suwardi |
| author_sort | Danwei Zhang |
| collection | DOAJ |
| description | Decades of studies on thermoelectric materials have enabled the design of high‐performance materials based on basic materials properties, such as bandgap engineering. In general, bandgap energies correspond to the temperature at which the peak thermoelectric performance occurs. For instance, CuGaTe2 with a relatively wide bandgap of 1.2 eV has its peak zT > 1 at > 900 K. On the other hand, the zT is usually very low (<0.1) for this material at room temperature. This severely limits its average zT and hence overall performance. In this study, a phase diagram‐guided Sb alloying strategy to improve the low‐temperature zT of CuGaTe2 is used, by leveraging on the solubility limits to control the formation of the microstructural defects. The addition of Sb simultaneously improves the electrical conductivity and decreases the lattice thermal conductivity. For a low‐temperature range of 300–623 K, this Sb‐alloying strategy enables the achievement of a record high average zT of 0.33. The strategy developed in this study targets the improvement of the low‐temperature range of CuGaTe2, which is rarely focused on for wide‐bandgap ABX2 compounds, opening up more opportunities for holistic performance improvements, potentially enabling ultrahigh‐performance thermoelectrics over a wide temperature range. |
| first_indexed | 2024-03-11T11:58:53Z |
| format | Article |
| id | doaj.art-926a83713f2a46099ab45268d714cdc1 |
| institution | Directory Open Access Journal |
| issn | 2699-9412 |
| language | English |
| last_indexed | 2024-03-11T11:58:53Z |
| publishDate | 2023-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Energy & Sustainability Research |
| spelling | doaj.art-926a83713f2a46099ab45268d714cdc12023-11-08T09:38:04ZengWiley-VCHAdvanced Energy & Sustainability Research2699-94122023-11-01411n/an/a10.1002/aesr.202300069Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2Danwei Zhang0Mingkun Xie1Dorsasadat Safanama2Kivanc Saglik3Xian Yi Tan4Samantha Faye Duran Solco5Jing Cao6Chee Kiang Ivan Tan7Hongfei Liu8Suxi Wang9Qiang Zhu10Wen Hui Derrick Fam11Qingyu Yan12Jing Wu13Ady Suwardi14Institute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeDepartment of Materials Science and Engineering National University of Singapore Singapore 117575 SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeSchool of Materials Science and Engineering Nanyang Technological University 50 Nanyang Ave, Block N4.1 #01-30 Singapore 639798 SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeInstitute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03 Singapore 138634 Republic of SingaporeDecades of studies on thermoelectric materials have enabled the design of high‐performance materials based on basic materials properties, such as bandgap engineering. In general, bandgap energies correspond to the temperature at which the peak thermoelectric performance occurs. For instance, CuGaTe2 with a relatively wide bandgap of 1.2 eV has its peak zT > 1 at > 900 K. On the other hand, the zT is usually very low (<0.1) for this material at room temperature. This severely limits its average zT and hence overall performance. In this study, a phase diagram‐guided Sb alloying strategy to improve the low‐temperature zT of CuGaTe2 is used, by leveraging on the solubility limits to control the formation of the microstructural defects. The addition of Sb simultaneously improves the electrical conductivity and decreases the lattice thermal conductivity. For a low‐temperature range of 300–623 K, this Sb‐alloying strategy enables the achievement of a record high average zT of 0.33. The strategy developed in this study targets the improvement of the low‐temperature range of CuGaTe2, which is rarely focused on for wide‐bandgap ABX2 compounds, opening up more opportunities for holistic performance improvements, potentially enabling ultrahigh‐performance thermoelectrics over a wide temperature range.https://doi.org/10.1002/aesr.202300069electronic transportenergy harvestingphase separationsthermal transportthermoelectricity |
| spellingShingle | Danwei Zhang Mingkun Xie Dorsasadat Safanama Kivanc Saglik Xian Yi Tan Samantha Faye Duran Solco Jing Cao Chee Kiang Ivan Tan Hongfei Liu Suxi Wang Qiang Zhu Wen Hui Derrick Fam Qingyu Yan Jing Wu Ady Suwardi Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 Advanced Energy & Sustainability Research electronic transport energy harvesting phase separations thermal transport thermoelectricity |
| title | Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 |
| title_full | Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 |
| title_fullStr | Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 |
| title_full_unstemmed | Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 |
| title_short | Sb Alloying for Engineering High‐Thermoelectric zT of CuGaTe2 |
| title_sort | sb alloying for engineering high thermoelectric zt of cugate2 |
| topic | electronic transport energy harvesting phase separations thermal transport thermoelectricity |
| url | https://doi.org/10.1002/aesr.202300069 |
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