Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors
The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in th...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/14/3011 |
| _version_ | 1797589538702360576 |
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| author | Mario Lauritano Peter Baumgartner Ahmet Çağri Ulusoy |
| author_facet | Mario Lauritano Peter Baumgartner Ahmet Çağri Ulusoy |
| author_sort | Mario Lauritano |
| collection | DOAJ |
| description | The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16 nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios. |
| first_indexed | 2024-03-11T01:08:55Z |
| format | Article |
| id | doaj.art-927149f9cca042ba845d856646c15cf8 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T01:08:55Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-927149f9cca042ba845d856646c15cf82023-11-18T19:04:33ZengMDPI AGElectronics2079-92922023-07-011214301110.3390/electronics12143011Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF TransistorsMario Lauritano0Peter Baumgartner1Ahmet Çağri Ulusoy2Intel Germany, 85579 Neubiberg, GermanyIntel Germany, 85579 Neubiberg, GermanyInstitute of Radio Frequency Engineering and Electronics (IHE), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, GermanyThe gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16 nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios.https://www.mdpi.com/2079-9292/12/14/3011gate resistancecharacterizationde-embeddingradio-frequency MOSFETs (RF MOSFETs)FinFET |
| spellingShingle | Mario Lauritano Peter Baumgartner Ahmet Çağri Ulusoy Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors Electronics gate resistance characterization de-embedding radio-frequency MOSFETs (RF MOSFETs) FinFET |
| title | Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors |
| title_full | Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors |
| title_fullStr | Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors |
| title_full_unstemmed | Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors |
| title_short | Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors |
| title_sort | test structures for the characterization of the gate resistance in 16 nm finfet rf transistors |
| topic | gate resistance characterization de-embedding radio-frequency MOSFETs (RF MOSFETs) FinFET |
| url | https://www.mdpi.com/2079-9292/12/14/3011 |
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