Chemical Vapor Deposition of IrTe<sub>2</sub> Thin Films
Two-dimensional (2D) IrTe<sub>2</sub> has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe<sub>2</sub> films using different Ir precursors on different substrates. T...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/7/575 |
| Summary: | Two-dimensional (2D) IrTe<sub>2</sub> has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe<sub>2</sub> films using different Ir precursors on different substrates. The Ir(acac)<sub>3</sub> precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe<sub>2</sub> films. Temperature-dependent Raman spectroscopic characterization has shown the q<sub>1/8</sub> phase to HT phase at ~250 K in the as-grown IrTe<sub>2</sub> films on h-BN. Electrical measurement has shown the HT phase to q<sub>1/5</sub> phase at around 220 K. |
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| ISSN: | 2073-4352 |