Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells

Surface passivation, which has been intensively studied recently, is essential for the perovskite solar cells (PSCs), due to the intrinsic defects in perovskite crystal. A series of chemical or physical methods have been published for passivating the defects of perovskites, which effectively suppres...

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Main Authors: Helong Wang, Guanchen Liu, Chongyang Xu, Fanming Zeng, Xiaoyin Xie, Sheng Wu
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/11/8/933
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author Helong Wang
Guanchen Liu
Chongyang Xu
Fanming Zeng
Xiaoyin Xie
Sheng Wu
author_facet Helong Wang
Guanchen Liu
Chongyang Xu
Fanming Zeng
Xiaoyin Xie
Sheng Wu
author_sort Helong Wang
collection DOAJ
description Surface passivation, which has been intensively studied recently, is essential for the perovskite solar cells (PSCs), due to the intrinsic defects in perovskite crystal. A series of chemical or physical methods have been published for passivating the defects of perovskites, which effectively suppressed the charge recombination and enhanced the photovoltaic performance. In this study, the n-type semiconductor of [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM) is dissolved in chlorobenzene (CB) for the surface passivation during the spin-coating process for depositing the two-dimensional (2D) perovskite film. This approach simplifies the fabrication process of 2D PSCs and benefits the film quality. As a result, the defects of perovskite film are effectively passivated by this method. A better perovskite/PCBM heterojunction is generated, exhibiting an increased film coverage and improved film morphology of PCBM. It is found that this technology results in an improved electron transporting performance as well as suppressed charge recombination for electron transport layer. As a result, PSCs based on the one-step formed perovskite/PCBM heterojunctions exhibit the optimized power conversion efficiency of 15.69% which is about 37% higher than that of regular perovskite devices. The device environmental stability is also enhanced due to the quality improved electron transport layer.
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spelling doaj.art-9297835a12b743ef88faee00718840d12023-11-22T07:17:03ZengMDPI AGCrystals2073-43522021-08-0111893310.3390/cryst11080933Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar CellsHelong Wang0Guanchen Liu1Chongyang Xu2Fanming Zeng3Xiaoyin Xie4Sheng Wu5School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, ChinaSchool of Chemistry and Chemical Technology, Hubei Polytechnic University, Huangshi 435003, ChinaYantai Research Institute and Graduate School of HEU, Harbin Engineering University, Harbin 150001, ChinaSchool of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, ChinaSchool of Chemistry and Chemical Technology, Hubei Polytechnic University, Huangshi 435003, ChinaYantai Research Institute and Graduate School of HEU, Harbin Engineering University, Harbin 150001, ChinaSurface passivation, which has been intensively studied recently, is essential for the perovskite solar cells (PSCs), due to the intrinsic defects in perovskite crystal. A series of chemical or physical methods have been published for passivating the defects of perovskites, which effectively suppressed the charge recombination and enhanced the photovoltaic performance. In this study, the n-type semiconductor of [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM) is dissolved in chlorobenzene (CB) for the surface passivation during the spin-coating process for depositing the two-dimensional (2D) perovskite film. This approach simplifies the fabrication process of 2D PSCs and benefits the film quality. As a result, the defects of perovskite film are effectively passivated by this method. A better perovskite/PCBM heterojunction is generated, exhibiting an increased film coverage and improved film morphology of PCBM. It is found that this technology results in an improved electron transporting performance as well as suppressed charge recombination for electron transport layer. As a result, PSCs based on the one-step formed perovskite/PCBM heterojunctions exhibit the optimized power conversion efficiency of 15.69% which is about 37% higher than that of regular perovskite devices. The device environmental stability is also enhanced due to the quality improved electron transport layer.https://www.mdpi.com/2073-4352/11/8/933perovskite solar cellselectron transport layer2D perovskiteanti-solvent
spellingShingle Helong Wang
Guanchen Liu
Chongyang Xu
Fanming Zeng
Xiaoyin Xie
Sheng Wu
Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
Crystals
perovskite solar cells
electron transport layer
2D perovskite
anti-solvent
title Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
title_full Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
title_fullStr Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
title_full_unstemmed Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
title_short Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells
title_sort surface passivation using n type organic semiconductor by one step method in two dimensional perovskite solar cells
topic perovskite solar cells
electron transport layer
2D perovskite
anti-solvent
url https://www.mdpi.com/2073-4352/11/8/933
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