The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I

Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the...

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Main Authors: Lusitra Munisa, Dewi Marianty, Rosari Saleh
Format: Article
Language:English
Published: Universitas Indonesia 2003-04-01
Series:Makara Seri Sains
Subjects:
Online Access:http://journal.ui.ac.id/science/article/view/300/296
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author Lusitra Munisa
Dewi Marianty
Rosari Saleh
author_facet Lusitra Munisa
Dewi Marianty
Rosari Saleh
author_sort Lusitra Munisa
collection DOAJ
description Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500°C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).
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spelling doaj.art-92b78a8fdbd74c8f84a8050432d29b0a2022-12-21T19:27:50ZengUniversitas IndonesiaMakara Seri Sains1693-66712003-04-010713542The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: ILusitra MunisaDewi MariantyRosari SalehSilicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500°C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).http://journal.ui.ac.id/science/article/view/300/296optical constantsamorphous silicon carbonsputteringthermal annealinghydrogenvoid
spellingShingle Lusitra Munisa
Dewi Marianty
Rosari Saleh
The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
Makara Seri Sains
optical constants
amorphous silicon carbon
sputtering
thermal annealing
hydrogen
void
title The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
title_full The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
title_fullStr The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
title_full_unstemmed The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
title_short The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I
title_sort effect of thermal annealing on the optical properties of a sic h films produced by dc sputtering methods i
topic optical constants
amorphous silicon carbon
sputtering
thermal annealing
hydrogen
void
url http://journal.ui.ac.id/science/article/view/300/296
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