The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabri...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-01-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/14/3/663 |
| _version_ | 1797417378936520704 |
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| author | Hongyi Xu Na Ren Jiupeng Wu Zhengyun Zhu Qing Guo Kuang Sheng |
| author_facet | Hongyi Xu Na Ren Jiupeng Wu Zhengyun Zhu Qing Guo Kuang Sheng |
| author_sort | Hongyi Xu |
| collection | DOAJ |
| description | This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%. |
| first_indexed | 2024-03-09T06:17:55Z |
| format | Article |
| id | doaj.art-92c68791a05141888ad269d8262f6c27 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T06:17:55Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-92c68791a05141888ad269d8262f6c272023-12-03T11:51:09ZengMDPI AGMaterials1996-19442021-01-0114366310.3390/ma14030663The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS DiodesHongyi Xu0Na Ren1Jiupeng Wu2Zhengyun Zhu3Qing Guo4Kuang Sheng5College of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaThis paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.https://www.mdpi.com/1996-1944/14/3/663SiCJBSMPSimplantationsurge |
| spellingShingle | Hongyi Xu Na Ren Jiupeng Wu Zhengyun Zhu Qing Guo Kuang Sheng The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes Materials SiC JBS MPS implantation surge |
| title | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes |
| title_full | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes |
| title_fullStr | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes |
| title_full_unstemmed | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes |
| title_short | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes |
| title_sort | impact of process conditions on surge current capability of 1 2 kv sic jbs and mps diodes |
| topic | SiC JBS MPS implantation surge |
| url | https://www.mdpi.com/1996-1944/14/3/663 |
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