Effects of electronic energy deposition on pre-existing defects in 6H–SiC
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-07-01
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| Series: | Nuclear Engineering and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1738573321000383 |
| _version_ | 1818572884425048064 |
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| author | Wenlong Liao Huan He Yang Li Wenbo Liu Hang Zang Jianan Wei Chaohui He |
| author_facet | Wenlong Liao Huan He Yang Li Wenbo Liu Hang Zang Jianan Wei Chaohui He |
| author_sort | Wenlong Liao |
| collection | DOAJ |
| description | Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects. |
| first_indexed | 2024-12-15T00:03:37Z |
| format | Article |
| id | doaj.art-92df6e7e51fa4e02a93117e25343f243 |
| institution | Directory Open Access Journal |
| issn | 1738-5733 |
| language | English |
| last_indexed | 2024-12-15T00:03:37Z |
| publishDate | 2021-07-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Nuclear Engineering and Technology |
| spelling | doaj.art-92df6e7e51fa4e02a93117e25343f2432022-12-21T22:42:49ZengElsevierNuclear Engineering and Technology1738-57332021-07-0153723572363Effects of electronic energy deposition on pre-existing defects in 6H–SiCWenlong Liao0Huan He1Yang Li2Wenbo Liu3Hang Zang4Jianan Wei5Chaohui He6School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSchool of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSchool of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSchool of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSchool of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSchool of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaCorresponding author.; School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, ChinaSilicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.http://www.sciencedirect.com/science/article/pii/S17385733210003832T-MD modelDefect recoveryElectronic energy loss6H–SiC |
| spellingShingle | Wenlong Liao Huan He Yang Li Wenbo Liu Hang Zang Jianan Wei Chaohui He Effects of electronic energy deposition on pre-existing defects in 6H–SiC Nuclear Engineering and Technology 2T-MD model Defect recovery Electronic energy loss 6H–SiC |
| title | Effects of electronic energy deposition on pre-existing defects in 6H–SiC |
| title_full | Effects of electronic energy deposition on pre-existing defects in 6H–SiC |
| title_fullStr | Effects of electronic energy deposition on pre-existing defects in 6H–SiC |
| title_full_unstemmed | Effects of electronic energy deposition on pre-existing defects in 6H–SiC |
| title_short | Effects of electronic energy deposition on pre-existing defects in 6H–SiC |
| title_sort | effects of electronic energy deposition on pre existing defects in 6h sic |
| topic | 2T-MD model Defect recovery Electronic energy loss 6H–SiC |
| url | http://www.sciencedirect.com/science/article/pii/S1738573321000383 |
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