Effects of electronic energy deposition on pre-existing defects in 6H–SiC

Effects of electronic energy deposition on pre-existing defects in 6H–SiC

Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-...

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Bibliographic Details
Main Authors: Wenlong Liao, Huan He, Yang Li, Wenbo Liu, Hang Zang, Jianan Wei, Chaohui He
Format: Article
Language:English
Published: Elsevier 2021-07-01
Series:Nuclear Engineering and Technology
Subjects:
2T-MD model
Defect recovery
Electronic energy loss
6H–SiC
Online Access:http://www.sciencedirect.com/science/article/pii/S1738573321000383

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