Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon
In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch proce...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10433651/ |
| _version_ | 1797289881627525120 |
|---|---|
| author | Wenzheng Cheng Manwen Liu Chenchen Zhang Daimo Li Zhihua Li |
| author_facet | Wenzheng Cheng Manwen Liu Chenchen Zhang Daimo Li Zhihua Li |
| author_sort | Wenzheng Cheng |
| collection | DOAJ |
| description | In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch process. The performance of the 3DCESD device is influenced by the structural parameter <inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>. Comparative simulations were conducted using TCAD. The overall electric field and weighting potential of 3DCESD are significantly optimized. MIP and continuous pulse laser were performed separately under bias voltages of –50V and –5V. The 3DCESD exhibits notable advantages, including rapid response speed, high charge collection efficiency, minimal inhomogeneity, and low power consumption. |
| first_indexed | 2024-03-07T19:12:26Z |
| format | Article |
| id | doaj.art-92e43da75e75417284564f8691ede4f7 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-07T19:12:26Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-92e43da75e75417284564f8691ede4f72024-03-01T00:00:17ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011214514910.1109/JEDS.2024.336573210433651Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag PhenomenonWenzheng Cheng0https://orcid.org/0000-0002-9584-1624Manwen Liu1https://orcid.org/0009-0009-2442-6480Chenchen Zhang2Daimo Li3https://orcid.org/0000-0003-4316-6580Zhihua Li4Integrated Circuit Advanced Process R and D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaIntegrated Circuit Advanced Process R and D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaIntegrated Circuit Advanced Process R and D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaIntegrated Circuit Advanced Process R and D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaIntegrated Circuit Advanced Process R and D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaIn this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch process. The performance of the 3DCESD device is influenced by the structural parameter <inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>. Comparative simulations were conducted using TCAD. The overall electric field and weighting potential of 3DCESD are significantly optimized. MIP and continuous pulse laser were performed separately under bias voltages of –50V and –5V. The 3DCESD exhibits notable advantages, including rapid response speed, high charge collection efficiency, minimal inhomogeneity, and low power consumption.https://ieeexplore.ieee.org/document/10433651/3DCESDRIE-lag phenomenoncomposite electrodeTCAD simulationMIPpulsed laser |
| spellingShingle | Wenzheng Cheng Manwen Liu Chenchen Zhang Daimo Li Zhihua Li Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon IEEE Journal of the Electron Devices Society 3DCESD RIE-lag phenomenon composite electrode TCAD simulation MIP pulsed laser |
| title | Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon |
| title_full | Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon |
| title_fullStr | Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon |
| title_full_unstemmed | Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon |
| title_short | Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon |
| title_sort | design of fast response back illuminated 3 d composite electrode silicon detector utilizing the rie lag phenomenon |
| topic | 3DCESD RIE-lag phenomenon composite electrode TCAD simulation MIP pulsed laser |
| url | https://ieeexplore.ieee.org/document/10433651/ |
| work_keys_str_mv | AT wenzhengcheng designoffastresponsebackilluminated3dcompositeelectrodesilicondetectorutilizingtherielagphenomenon AT manwenliu designoffastresponsebackilluminated3dcompositeelectrodesilicondetectorutilizingtherielagphenomenon AT chenchenzhang designoffastresponsebackilluminated3dcompositeelectrodesilicondetectorutilizingtherielagphenomenon AT daimoli designoffastresponsebackilluminated3dcompositeelectrodesilicondetectorutilizingtherielagphenomenon AT zhihuali designoffastresponsebackilluminated3dcompositeelectrodesilicondetectorutilizingtherielagphenomenon |