Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices
Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices...
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| Format: | Article |
| Language: | English |
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Electronic Physician
2014-02-01
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| Series: | Electronic Physician |
| Subjects: | |
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4324268/ |
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| author | Rozita Farhadi Bita Farhadi |
| author_facet | Rozita Farhadi Bita Farhadi |
| author_sort | Rozita Farhadi |
| collection | DOAJ |
| description | Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively
in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor
with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by
implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to
replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order
to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research
tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS
structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown
voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and
decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use
transistors, such as Radio Frequency (RF) and electrocardiograph machines. |
| first_indexed | 2024-04-12T00:34:14Z |
| format | Article |
| id | doaj.art-9302cc2ed88b4531a3940b8cfeb6a908 |
| institution | Directory Open Access Journal |
| issn | 2008-5842 2008-5842 |
| language | English |
| last_indexed | 2024-04-12T00:34:14Z |
| publishDate | 2014-02-01 |
| publisher | Electronic Physician |
| record_format | Article |
| series | Electronic Physician |
| spelling | doaj.art-9302cc2ed88b4531a3940b8cfeb6a9082022-12-22T03:55:13ZengElectronic PhysicianElectronic Physician2008-58422008-58422014-02-016281681910.14661/2014.816-819Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical DevicesRozita FarhadiBita FarhadiPower transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4324268/VDMOS transistorUIS implantelectrocardiograph machinenoise |
| spellingShingle | Rozita Farhadi Bita Farhadi Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices Electronic Physician VDMOS transistor UIS implant electrocardiograph machine noise |
| title | Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices |
| title_full | Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices |
| title_fullStr | Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices |
| title_full_unstemmed | Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices |
| title_short | Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices |
| title_sort | optimization of vertical double diffused metal oxide semiconductor vdmos power transistor structure for use in high frequencies and medical devices |
| topic | VDMOS transistor UIS implant electrocardiograph machine noise |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4324268/ |
| work_keys_str_mv | AT rozitafarhadi optimizationofverticaldoublediffusedmetaloxidesemiconductorvdmospowertransistorstructureforuseinhighfrequenciesandmedicaldevices AT bitafarhadi optimizationofverticaldoublediffusedmetaloxidesemiconductorvdmospowertransistorstructureforuseinhighfrequenciesandmedicaldevices |