Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope
Ultrathin hexagonal boron nitride (h-BN) has recently attracted a lot of attention due to its excellent properties. With the rapid development of chemical vapor deposition (CVD) technology to synthesize wafer-scale single-crystal h-BN, the properties of h-BN have been widely investigated with a vari...
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Frontiers Media S.A.
2021-08-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.735344/full |
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| author | Shiyu Deng Yanyun Gu Xi Wan Mingliang Gao Shijia Xu Kun Chen Huanjun Chen |
| author_facet | Shiyu Deng Yanyun Gu Xi Wan Mingliang Gao Shijia Xu Kun Chen Huanjun Chen |
| author_sort | Shiyu Deng |
| collection | DOAJ |
| description | Ultrathin hexagonal boron nitride (h-BN) has recently attracted a lot of attention due to its excellent properties. With the rapid development of chemical vapor deposition (CVD) technology to synthesize wafer-scale single-crystal h-BN, the properties of h-BN have been widely investigated with a variety of material characterization techniques. However, the electronic properties of monolayer h-BN have rarely been quantitatively determined due to its atomically thin thickness and high sensitivity to the surrounding environment. In this work, by the combined use of AFM (atomic force microscope) PeakForce Tunneling (PF-TUNA) mode and Kevin probe force microscopy (KPFM) model, both the electrical resistivity (529 MΩ cm) and the inherent Fermi level (∼4.95 eV) of the as-grown monolayer h-BN flakes on the copper substrate have been quantitatively analyzed. Moreover, direct visualization of the high-temperature oxidation-resistance effect of h-BN nanoflakes has been presented. Our work demonstrates a direct estimation of the electronic properties for 2D materials on the initial growth substrate without transfer, avoiding any unwanted contaminations introduced during the transfer process. The quantitative analysis by state-of-the-art atomic force microscope techniques implies that monolayer h-BN can be employed as an atomically thin and high-quality insulator for 2D electronics, as well as a high-temperature antioxidation layer for electronic device applications. |
| first_indexed | 2024-12-22T10:14:01Z |
| format | Article |
| id | doaj.art-9306b749d7464ea89250f517f6593e5a |
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| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-12-22T10:14:01Z |
| publishDate | 2021-08-01 |
| publisher | Frontiers Media S.A. |
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| series | Frontiers in Materials |
| spelling | doaj.art-9306b749d7464ea89250f517f6593e5a2022-12-21T18:29:46ZengFrontiers Media S.A.Frontiers in Materials2296-80162021-08-01810.3389/fmats.2021.735344735344Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force MicroscopeShiyu Deng0Yanyun Gu1Xi Wan2Mingliang Gao3Shijia Xu4Kun Chen5Huanjun Chen6State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, ChinaEngineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, ChinaEngineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, ChinaEngineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, ChinaEngineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, ChinaUltrathin hexagonal boron nitride (h-BN) has recently attracted a lot of attention due to its excellent properties. With the rapid development of chemical vapor deposition (CVD) technology to synthesize wafer-scale single-crystal h-BN, the properties of h-BN have been widely investigated with a variety of material characterization techniques. However, the electronic properties of monolayer h-BN have rarely been quantitatively determined due to its atomically thin thickness and high sensitivity to the surrounding environment. In this work, by the combined use of AFM (atomic force microscope) PeakForce Tunneling (PF-TUNA) mode and Kevin probe force microscopy (KPFM) model, both the electrical resistivity (529 MΩ cm) and the inherent Fermi level (∼4.95 eV) of the as-grown monolayer h-BN flakes on the copper substrate have been quantitatively analyzed. Moreover, direct visualization of the high-temperature oxidation-resistance effect of h-BN nanoflakes has been presented. Our work demonstrates a direct estimation of the electronic properties for 2D materials on the initial growth substrate without transfer, avoiding any unwanted contaminations introduced during the transfer process. The quantitative analysis by state-of-the-art atomic force microscope techniques implies that monolayer h-BN can be employed as an atomically thin and high-quality insulator for 2D electronics, as well as a high-temperature antioxidation layer for electronic device applications.https://www.frontiersin.org/articles/10.3389/fmats.2021.735344/fullh-BNresistancesurface potentialchemical vapor depositionPeakForce TUNA AFMKPFM (kelvin probe force microscope) |
| spellingShingle | Shiyu Deng Yanyun Gu Xi Wan Mingliang Gao Shijia Xu Kun Chen Huanjun Chen Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope Frontiers in Materials h-BN resistance surface potential chemical vapor deposition PeakForce TUNA AFM KPFM (kelvin probe force microscope) |
| title | Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope |
| title_full | Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope |
| title_fullStr | Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope |
| title_full_unstemmed | Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope |
| title_short | Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope |
| title_sort | probing electronic properties of cvd monolayer hexagonal boron nitride by an atomic force microscope |
| topic | h-BN resistance surface potential chemical vapor deposition PeakForce TUNA AFM KPFM (kelvin probe force microscope) |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2021.735344/full |
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