Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency
Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-01-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1073/9/1/42 |
| _version_ | 1811184844293537792 |
|---|---|
| author | Mitsuoki Hishida Takeyuki Sekimoto Mitsuhiro Matsumoto Akira Terakawa |
| author_facet | Mitsuoki Hishida Takeyuki Sekimoto Mitsuhiro Matsumoto Akira Terakawa |
| author_sort | Mitsuoki Hishida |
| collection | DOAJ |
| description | Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD. |
| first_indexed | 2024-04-11T13:20:21Z |
| format | Article |
| id | doaj.art-930719a5a2ae449089a76cccbd4f8681 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-04-11T13:20:21Z |
| publishDate | 2016-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-930719a5a2ae449089a76cccbd4f86812022-12-22T04:22:15ZengMDPI AGEnergies1996-10732016-01-01914210.3390/en9010042en9010042Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion EfficiencyMitsuoki Hishida0Takeyuki Sekimoto1Mitsuhiro Matsumoto2Akira Terakawa3Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, JapanAdvanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, JapanEco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, JapanEco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, JapanStopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.http://www.mdpi.com/1996-1073/9/1/42thin-film silicon tandem solar cellmicrocrystalline siliconamorphous siliconcrystallinityplasma-enhanced chemical vapor depositionconversion efficiency |
| spellingShingle | Mitsuoki Hishida Takeyuki Sekimoto Mitsuhiro Matsumoto Akira Terakawa Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency Energies thin-film silicon tandem solar cell microcrystalline silicon amorphous silicon crystallinity plasma-enhanced chemical vapor deposition conversion efficiency |
| title | Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency |
| title_full | Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency |
| title_fullStr | Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency |
| title_full_unstemmed | Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency |
| title_short | Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency |
| title_sort | intermittent very high frequency plasma deposition on microcrystalline silicon solar cells enabling high conversion efficiency |
| topic | thin-film silicon tandem solar cell microcrystalline silicon amorphous silicon crystallinity plasma-enhanced chemical vapor deposition conversion efficiency |
| url | http://www.mdpi.com/1996-1073/9/1/42 |
| work_keys_str_mv | AT mitsuokihishida intermittentveryhighfrequencyplasmadepositiononmicrocrystallinesiliconsolarcellsenablinghighconversionefficiency AT takeyukisekimoto intermittentveryhighfrequencyplasmadepositiononmicrocrystallinesiliconsolarcellsenablinghighconversionefficiency AT mitsuhiromatsumoto intermittentveryhighfrequencyplasmadepositiononmicrocrystallinesiliconsolarcellsenablinghighconversionefficiency AT akiraterakawa intermittentveryhighfrequencyplasmadepositiononmicrocrystallinesiliconsolarcellsenablinghighconversionefficiency |